Jason D Reed

US Patent:

6437965, Aug 20, 2002

Filed:

Nov 28, 2000

Appl. No.:

09/724292

Inventors:

Calvin L. Adkins - Malabar FL
David John Tammen - Satellite Beach FL
Michael Alan Gribbons - Mt. Laurel NJ
Jason D. Reed - West Hartford CT
Claude Hilbert - Austin TX
Richard D. Nelson - Austin TX

Assignee:

Harris Corporation - Melbourne FL

International Classification:

H01G 4005

US Classification:

361303, 3613061, 361290, 361287, 3613011

Abstract:

An electronic device, such as a filter or phase shifter, for example, includes a substrate, and a MEMS capacitor on the substrate and having a plurality of selectable capacitance values. The MEMS capacitor preferably includes a lower capacitor electrode on the substrate, and a movable bridge including end portions connected to the substrate laterally adjacent the lower capacitor electrode. The movable bridge may also include a conductive medial portion between the end portions defining an upper capacitor electrode suspended above the lower capacitor electrode and being movable between an upper position and a lower position by an electrostatic force generated between the capacitor electrodes. The upper and lower positions provide respective low and high selectable capacitance values. Moreover, the movable bridge may further include at least one travel limiting portion between the end portions for engaging adjacent substrate portions to keep the upper capacitor electrode in a predetermined spaced relation from the lower capacitor electrode when in the lower position.

US Patent:

7512303, Mar 31, 2009

Filed:

Jun 27, 2007

Appl. No.:

11/769070

Inventors:

Benjamin F. Catching - Santa Rosa CA, US
Donald M. Friedrich - Windsor CA, US
Charles A. Hulse - Sebastopol CA, US
Marc K. Von Gunten - Los Altos CA, US
Jason Reed - West Hartford CT, US
Karl Kissa - West Simsbury CT, US
Glen Drake - Windsor CT, US
Julia Duncan - North Granby CT, US
William J. Minford - Windsor CT, US
Hiren V. Shah - Santa Rosa CA, US
Jerry Zieba - Santa Rosa CA, US
Jason Jiazhan Xu - Weatogue CT, US

Assignee:

JDS Uniphase Corporation - Milpitas CA

International Classification:

G02B 6/10

US Classification:

385131

Abstract:

The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

US Patent:

8564129, Oct 22, 2013

Filed:

Aug 3, 2012

Appl. No.:

13/565960

Inventors:

Robert Joseph Therrien - Cary NC, US
Jason D. Reed - Chapel Hill NC, US
Jaime A. Rumsey - Holly Springs NC, US
Allen L. Gray - Holly Springs NC, US

Assignee:

Phononic Devices, Inc. - Durham NC

International Classification:

H01L 23/48
H01L 29/43

US Classification:

257741, 257743, 257744, 257748, 257467, 257E23163, 438 54, 438602, 438603

Abstract:

Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0. 2 electron-volts (eV), more preferably in a range of and including 0 to 0. 1 eV, even more preferably in a range of and including 0 to 0. 05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10ohmscm.

US Patent:

20200111942, Apr 9, 2020

Filed:

Mar 7, 2019

Appl. No.:

16/295699

Inventors:

- Durham NC, US
Alex Guichard - Apex NC, US
Brooks Henderson - Durham NC, US
Steve Seel - Cary NC, US
Ananthakrishnan Narayanan - Durham NC, US
Pablo Cantu - Raleigh NC, US
Kevin Oswalt - Durham NC, US
Swathi Upadhayay - Durham NC, US
Rajesh Bikky - Durham NC, US
Jason Reed - Chapel Hill NC, US

International Classification:

H01L 35/32
H01L 35/34
B32B 15/04

Abstract:

Corrosion resistant thermoelectric devices and methods of manufacturing them are disclosed herein. In some embodiments, a corrosion resistant thermoelectric device includes a semiconductor layer; a corrosion resistant top metallization layer formed on a top surface of the semiconductor layer; and a corrosion resistant bottom metallization layer formed on a bottom surface of the semiconductor layer, where the bottom surface of the semiconductor layer is opposite of the top surface of the semiconductor layer. In this way, the corrosion resistance of the device is provided by the intrinsic properties of the materials used rather than provided by the packaging or a surface coating. As such, the corrosion protection can be ensured and verified by control of the materials used to construct the device. This approach is also less susceptible to damage from shipment, handling, integration, attachment, and assembly operations because the corrosion protection is intrinsic to the materials used in construction.

US Patent:

20180261748, Sep 13, 2018

Filed:

Mar 9, 2018

Appl. No.:

15/917282

Inventors:

- Durham NC, US
Devon Newman - Salt Lake City UT, US
Abhishek Yadav - Cary NC, US
Jason D. Reed - Chapel Hill NC, US
Kevin S. Schneider - Cary NC, US
Jesse W. Edwards - Wake Forest NC, US

International Classification:

H01L 35/30
H01L 35/32
H01L 23/38

Abstract:

A thermoelectric heat pump cascade and a method of manufacturing such are disclosed herein. In some embodiments, a thermoelectric heat pump cascade includes a first stage plurality of thermoelectric devices attached to a first stage circuit board and a first stage thermal interface material between the thermoelectric devices and the heat spreading lid over the thermoelectric devices. The thermoelectric heat pump cascade component also includes a second stage plurality of thermoelectric devices attached to a second stage circuit board where the second stage plurality of thermoelectric devices has a greater heat pumping capacity than the first stage plurality of thermoelectric devices, and a second stage thermal interface material between the second stage plurality of thermoelectric devices and the first stage plurality of thermoelectric devices. In this way, a greater temperature difference can be achieved while allowing for protection of the thermoelectric devices, simplifying design, and improving reliability of the product.

US Patent:

20170365767, Dec 21, 2017

Filed:

Jun 20, 2017

Appl. No.:

15/628218

Inventors:

- Durham NC, US
Devon Newman - Morrisville NC, US
Arthur Prejs - Cary NC, US
Alex R. Guichard - Apex NC, US
Jason D. Reed - Chapel Hill NC, US
Kevin Shawne Schneider - Cary NC, US
Brian Williams - Chapel Hill NC, US
Robert J. Therrien - Cary NC, US

International Classification:

H01L 35/34
H01L 35/08
H01L 35/10
H01L 35/12

Abstract:

A thermoelectric device with multiple headers and a method of manufacturing such a device are provided herein. In some embodiments, a thermoelectric device includes multiple thermoelectric legs, a cold header thermally attached to the thermoelectric legs, and a hot header thermally attached to the thermoelectric legs opposite the cold header. At least one of the cold header and the hot header includes at least one score line. According to some embodiments disclosed herein, this the thermal stress on the thermoelectric device can be greatly reduced or relieved by splitting the header into multiple pieces or by scoring the header by a depth X. This enables the use of larger thermoelectric devices and/or thermoelectric devices with an increased lifespan.