Jason M Regis

US Patent:

20010003678, Jun 14, 2001

Filed:

Jul 22, 1998

Appl. No.:

09/121190

Inventors:

JAMES A. STINNETT - MOUNTAIN VIEW CA, US
CYNTHIA B. BROOKS - SUNNYVALE CA, US
WALTER R. MERRY - CUPERTINO CA, US
JASON REGIS - AMESBURY MA, US

International Classification:

H01L021/4763
H01L021/302
H01L021/461

US Classification:

438/723000, 438/623000, 438/692000, 438/711000

Abstract:

An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.

US Patent:

20060051968, Mar 9, 2006

Filed:

Dec 12, 2002

Appl. No.:

10/498857

Inventors:

Ajey Joshi - San Jose CA, US
Pui Man Ng - Sunnyvale CA, US
James Stinnett - Mountain View CA, US
Usama Dadu - Hollister CA, US
Jason Regis - Kingston NH, US

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438723000, 438712000, 438711000, 438710000

Abstract:

A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CF, and a second gas having the formula CHF, wherein a/b≧⅔, and wherein x/z≧. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent corner layer selectivity, photo resist selectivity, under layer selectivity, and profile and bottom CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.