Jason A Stephens

US Patent:

8444766, May 21, 2013

Filed:

Dec 10, 2009

Appl. No.:

12/635509

Inventors:

Jason Michael Stephens - San Francisco CA, US
Bradley Owen Stimson - Monte Sereno CA, US
Guleid Nur Abdi Hussen - San Francisco CA, US

Assignee:

ThinSilicon Corporation - Mountain View CA

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

118715, 15634529

Abstract:

A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.

US Patent:

20080295882, Dec 4, 2008

Filed:

May 27, 2008

Appl. No.:

12/127141

Inventors:

JASON M. STEPHENS - REDWOOD CITY CA, US
KEVIN MICHAEL COAKLEY - PALO ALTO CA, US
GULEID HUSSEN - SAN FRANCISCO CA, US

Assignee:

THINSILICON CORPORATION - MOUNTAIN VIEW CA

International Classification:

H01L 31/0248
H01L 31/042
H01L 21/00

US Classification:

136244, 136252, 136255, 136258, 438 72, 257E21001

Abstract:

A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.

US Patent:

20100313935, Dec 16, 2010

Filed:

Jun 8, 2010

Appl. No.:

12/796378

Inventors:

Kevin Michael Coakley - Palo Alto CA, US
Guleid Hussen - Mountain View CA, US
Jason Stephens - Mountain View CA, US
Kunal Girotra - Mountain View CA, US
Samuel Rosenthal - San Francisco CA, US

Assignee:

THINSILICION CORPORATION - Mountain View CA

International Classification:

H01L 31/06
H01L 31/18

US Classification:

136249, 438 59, 257E31043, 257E31047

Abstract:

A monolithically-integrated photovoltaic module is provided. The module includes an insulating substrate and a lower electrode above the substrate. The method also includes a lower stack of microcrystalline silicon layers above the lower electrode, an upper stack of amorphous silicon layers above the lower stack, and an upper electrode above the upper stack. The upper and lower stacks of silicon layers have different energy band gaps. The module also includes a built-in bypass diode vertically extending in the upper and lower stacks of silicon layers from the lower electrode to the upper electrode. The built-in bypass diode includes portions of the lower and upper stacks that have a greater crystalline portion than a remainder of the lower and upper stacks.

US Patent:

20210292246, Sep 23, 2021

Filed:

Jun 8, 2021

Appl. No.:

17/342212

Inventors:

- St. Louis MO, US
Dennis George REX - Williams OR, US
Guleid HUSSEN - San Francisco CA, US
Michael PARKER - Arnold CA, US
Jason STEPHENS - San Francisco CA, US

Assignee:

Watlow Electric Manufacturing Company - St. Louis MO

International Classification:

C04B 37/02
B32B 1/08
B32B 15/04
B32B 15/20
H02G 3/22
H05G 2/00

Abstract:

An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

US Patent:

20200357676, Nov 12, 2020

Filed:

Mar 13, 2020

Appl. No.:

16/817627

Inventors:

- Santa Clara CA, US
Frank Balma - Los Gatos CA, US
Michael Parker - Brentwood CA, US
Jason Stephens - San Francisco CA, US
Guleid Hussen - San Francisco CA, US

International Classification:

H01L 21/683
B23Q 3/15
B23K 1/00
C04B 37/00
H01L 21/687
B23K 1/19
B23K 1/20
B23K 1/008

Abstract:

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of C to C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of C to C

US Patent:

20190291199, Sep 26, 2019

Filed:

Nov 28, 2018

Appl. No.:

16/203562

Inventors:

- Santa Clara CA, US
Guleid Hussen - San Francisco CA, US
Jason Stephens - San Francisco CA, US
Michael Parker - Brentwood CA, US
Alfred Grant Elliot - Palo Alto CA, US

International Classification:

B23K 1/00
B23K 1/19
B23K 35/28
C04B 35/581
C04B 37/00
H01L 21/683

Abstract:

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

US Patent:

20190194078, Jun 27, 2019

Filed:

Oct 24, 2018

Appl. No.:

16/169938

Inventors:

- SANTA CLARA CA, US
Dennis George Rex - Williams OR, US
Guleid Hussen - San Francisco CA, US
Michael Parker - Brentwood CA, US
Jason Stephens - San Francisco CA, US

International Classification:

C04B 37/02
B32B 1/08
B32B 15/04
B32B 15/20
H02G 3/22

Abstract:

An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

US Patent:

20170263486, Sep 14, 2017

Filed:

Nov 2, 2016

Appl. No.:

15/341843

Inventors:

- Santa Clara CA, US
Frank Balma - Los Gatos CA, US
Michael Parker - Brentwood CA, US
Jason Stephens - San Francisco CA, US
Guleid Hussen - San Francisco CA, US

International Classification:

H01L 21/683

Abstract:

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.