Jason Swain Stevens

US Patent:

20130341433, Dec 26, 2013

Filed:

Jun 22, 2012

Appl. No.:

13/531254

Inventors:

Shambhu N. Roy - Fremont CA, US
Vincent E. Burkhart - Cupertino CA, US
Natan Solomon - Sunnyvale CA, US
Sanjay Gopinath - Fremont CA, US
Kaihan Abidi Ashtiani - Cupertino CA, US
Bart van Schravendijk - Sunnyvale CA, US
Jason Stevens - Los Altos CA, US
Dhritiman Subha Kashyap - Indira Nagar, IN
David Cohen - San Jose CA, US

International Classification:

B05B 1/14

US Classification:

239548

Abstract:

A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in a faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.

US Patent:

20220298624, Sep 22, 2022

Filed:

Aug 10, 2020

Appl. No.:

17/753042

Inventors:

- Fremont CA, US
Chiukin Steven Lai - Sunnyvale CA, US
Thomas M. Pratt - San Jose CA, US
Eric H. Lenz - Livermore CA, US
Jason Stevens - Los Altos CA, US

International Classification:

C23C 16/06
C23C 16/30
C23C 16/34
C23C 16/455
H01L 21/285
H01L 21/28

Abstract:

Substantially carbon-free molybdenum-containing and tungsten-containing films are deposited on semiconductor substrates using halide-free metalorganic precursors. The precursors do not include metal-carbon bonds, carbonyl ligands, and, preferably do not include beta-hydrogen atoms. Metal-containing films, such as molybdenum nitride, molybdenum oxynitride, molybdenum silicide, and molybdenum boride with carbon content of less than about 5% atomic, such as less than about 3% atomic are deposited. The films are deposited in some embodiments by reacting the metal-containing precursor with a reactant on a surface of a substrate in an absence of plasma, e.g. using several ALD cycles. In some embodiments the formed film is then treated with a second reactant in a plasma to modify its properties (e.g., to densify the film, to reduce resistivity of the film, or to increase its work function). The films can be used as liners, diffusion barriers, and as electrode material in pMOS devices.