Jay L Goldman

US Patent:

7064372, Jun 20, 2006

Filed:

Dec 3, 2004

Appl. No.:

11/004380

Inventors:

Xiangfeng Duan - Mountain View CA, US
Chunming Niu - Palo Alto CA, US
Stephen Empedocles - Menlo Park CA, US
Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Vijendra Sahi - Menlo Park CA, US
Lawrence A. Bock - Encinitas CA, US
David P. Stumbo - Belmont CA, US
J. Wallace Parce - Palo Alto CA, US
Jay L. Goldman - Mountain View CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 27/108
H01L 29/94
H01L 29/76

US Classification:

257296, 257 9, 257 14, 257746

Abstract:

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

US Patent:

7067867, Jun 27, 2006

Filed:

Sep 30, 2003

Appl. No.:

10/674060

Inventors:

Xiangfeng Duan - Mountain View CA, US
Chunming Niu - Palo Alto CA, US
Stephen Empedocles - Mountain View CA, US
Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Vijendra Sahi - Menlo Park CA, US
Lawrence Bock - Encinitas CA, US
David Stumbo - Belmont CA, US
J. Wallace Parce - Palo Alto CA, US
Jay L. Goldman - Mountain View CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 27/108
H01L 29/94
H01L 29/76
H01L 21/336
H01L 21/8234

US Classification:

257296, 257306, 257309, 257530, 257213, 257531, 257 13, 438197, 438253, 438254, 438 22, 438268, 438270

Abstract:

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

US Patent:

7105428, Sep 12, 2006

Filed:

Apr 29, 2005

Appl. No.:

11/117703

Inventors:

Yaoling Pan - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay L. Goldman - Mountain View CA, US
Shahriar Mostarshed - San Mateo CA, US
Chunming Niu - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
Dave Stumbo - Belmont CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 21/20
H01L 21/477
H01L 21/31
H01L 23/48
H01L 29/40
B01J 27/22
H01L 21/44

US Classification:

438584, 438795, 438798, 438962, 438759, 257734, 257746, 257E5104, 977742, 977843, 977743

Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

US Patent:

7135728, Nov 14, 2006

Filed:

Apr 13, 2005

Appl. No.:

11/106340

Inventors:

Xiangfeng Duan - Mountain View CA, US
Chunming Niu - Palo Alto CA, US
Stephen A. Empedocles - Menlo Park CA, US
Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Vijendra Sahi - Menlo Park CA, US
Lawrence A. Bock - Encinitas CA, US
David P. Stumbo - Belmont CA, US
Parce J. Wallace - Palo Alto CA, US
Jay L. Goldman - Mountain View CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 27/108
H01L 29/76
H01L 29/94
H01L 31/119

US Classification:

257296, 257 14, 257 19, 257 18, 257 9, 257746, 257784, 257E5104, 977762, 977781, 977789

Abstract:

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

US Patent:

7233041, Jun 19, 2007

Filed:

Jul 21, 2006

Appl. No.:

11/490637

Inventors:

Xiangfeng Duan - Mountain View CA, US
Chunming Niu - Palo Alto CA, US
Stephen A. Empedocles - Menlo Park CA, US
Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Vijendra Sahi - Menlo Park CA, US
Lawrence A. Bock - Encinitas CA, US
David P. Stumbo - Belmont CA, US
Parce J. Wallace - Palo Alto CA, US
Jay L. Goldman - Mountain View CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 27/108
H01L 29/76
H01L 29/94
H01L 31/119

US Classification:

257296, 257 14, 257 9, 257E29081, 257E29093, 257E33005, 977742

Abstract:

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

US Patent:

7273732, Sep 25, 2007

Filed:

Jul 21, 2006

Appl. No.:

11/490636

Inventors:

Yaoling Pan - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay L. Goldman - Mountain View CA, US
Shahriar Mostarshed - San Mateo CA, US
Chunming Niu - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
Dave Stumbo - Belmont CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 51/40

US Classification:

435 99, 438510, 438514, 438689, 257E51038, 257E5104, 977742

Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

US Patent:

7339184, Mar 4, 2008

Filed:

Apr 29, 2005

Appl. No.:

11/117707

Inventors:

Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Stephen A. Empedocles - Menlo Park CA, US
Jay L. Goldman - Mountain View CA, US
James M. Hamilton - Sunnyvale CA, US
David L. Heald - Solvang CA, US
Francesco Lemmi - Sunnyvale CA, US
Chunming Niu - Palo Alto CA, US
Yaoling Pan - Union City CA, US
George Pontis - Redwood City CA, US
Vijendra Sahi - Menlo park CA, US
Erik C. Scher - San Francisco CA, US
David P. Stumbo - Belmont CA, US
Jeffery A. Whiteford - Belmont CA, US

Assignee:

Nanosys, Inc - Palo Alto CA

International Classification:

H01L 29/00

US Classification:

257 1, 117 84, 257E21001, 977938

Abstract:

The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

US Patent:

7391018, Jun 24, 2008

Filed:

Sep 14, 2005

Appl. No.:

11/226075

Inventors:

Chunming Niu - Palo Alto CA, US
Robert Hugh Daniels - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay L. Goldman - Mountain View CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01J 49/04

US Classification:

250288, 428650, 428651, 977701

Abstract:

The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.