Jeff T Olsen

US Patent:

62073044, Mar 27, 2001

Filed:

Jul 2, 1999

Appl. No.:

9/347067

Inventors:

Kam Law - Union City CA
Jeff Olsen - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L21/36

US Classification:

428698

Abstract:

An improved method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250. degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

US Patent:

6024044, Feb 15, 2000

Filed:

Oct 9, 1997

Appl. No.:

8/948279

Inventors:

Kam S. Law - Union City CA
Robert M. Robertson - Santa Clara CA
Quanyuan Shang - San Jose CA
Jeff Olsen - Los Gatos CA
Carl Sorensen - Morgan Hill CA

Assignee:

Applied Komatsu Technology, Inc. - Tokyo

International Classification:

C23C 1650

US Classification:

118723E

Abstract:

An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0. 4 Torr and 3 Torr, and at a temperature between about 250. degree. C. and 450. degree. C.

US Patent:

59287322, Jul 27, 1999

Filed:

Apr 10, 1995

Appl. No.:

8/422668

Inventors:

Kam Law - Union City CA
Jeff Olsen - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 124

US Classification:

427579

Abstract:

A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250. degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.