- Phoenix AZ, US David T. Price - Gresham OR, US Jeffery A. NEULS - Beaverton OR, US Dean E. PROBST - West Jordan UT, US Santosh MENON - Portland OR, US Peter A. BURKE - Portland OR, US Bigildis DOSDOS - San Jose CA, US
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ
International Classification:
H01L 23/495 H01L 23/00 H01L 25/11 H01L 25/00
Abstract:
A stacked assembly of semiconductor devices includes a mounting pad covering a first portion of a low-side semiconductor device, and a contact layer covering a second portion of the low-side semiconductor device. A first mounting clip electrically connected to the contact layer has a supporting portion joining the first mounting clip to a first lead frame portion. A second mounting clip attached to the mounting pad has a supporting portion joining the second mounting clip to a second lead frame portion. A high-side semiconductor device has a first terminal electrically connected to the first mounting clip and thereby to the contact layer, and a second terminal electrically connected to the second mounting clip.
- Phoenix AZ, US Jeffery A. NEULS - Beaverton OR, US Masaichi EDA - Gresham OR, US Peter A. BURKE - Portland OR, US Peter McGRATH - Portland OR, US Prasad VENKATRAMAN - Gilbert AZ, US
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ
International Classification:
H01L 29/66 H01L 29/423
Abstract:
In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches the material of the portion of the material between the trenches. Source and gate contact openings are formed together.
Stacked Image Sensor Capacitors And Related Methods
- Phoenix AZ, US Angel RODRIGUEZ - San Jose CA, US David T. PRICE - Gresham OR, US Jeffery Allen NEULS - Beaverton OR, US Kenneth Andrew BATES - Happy Valley OR, US Rick MAURITZSON - Meridian ID, US
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ
International Classification:
H01L 27/146 H01L 27/06
Abstract:
Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array includes a plurality of photodiodes and a plurality of transfer gates. The image sensor array may also include a second die including a second plurality of interconnects and a plurality of capacitors, each capacitor selected from the group consisting of deep trench capacitors, metal-insulator-metal (MIM) capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and 3D stacked capacitors. The first die may be coupled to the second die through the first plurality of interconnects and through the second plurality of interconnects. No more than eight photodiodes of the plurality of photodiodes of the first die may be electrically coupled with no more than four capacitors of the plurality of capacitors.