Jeffrey J Bridges

US Patent:

7987819, Aug 2, 2011

Filed:

Apr 16, 2008

Appl. No.:

12/104412

Inventors:

Jeffrey A. Bridges - Allen TX, US

International Classification:

A01K 13/00

US Classification:

119604, 15416

Abstract:

A portable animal washing system having a means of dispensing a pressurized liquid cleaning agent, a means of dispensing a pressurized liquid rinsing agent, a means of extracting said liquid cleaning and rinsing agents as well as any dislodged dirt, debris, parasites, or foreign matter from the animal's coat, and a means of drying the animal's coat. The device is designed in such a way that both the cleaning and the rinsing agents may be directed into and under the animal's coat and then be immediately extracted along with any dislodged dirt, debris, parasites or other foreign material. The device is also design in such a way as to direct a stream of heated forced air into and under the coat of the animal so as to dry the animal.

US Patent:

47151099, Dec 29, 1987

Filed:

Jun 12, 1985

Appl. No.:

6/744163

Inventors:

Jeffrey M. Bridges - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2128

US Classification:

437200

Abstract:

The disclosure relates to the formation of reachup contacts for VLSI integrated circuit interconnects wherein studs are formed of a conducting material which reaches up through subsequently applied insulating films or the like to contact metal patterns. The reachup contacts are fabricated using LPCVD polycrystalline silicon as a refill in etched apertures in an insulating layer with a titanium or other appropriate material over the silicon layer with subsequent reaction of the silicon layer and the titanium layer to form temperature resistant studs of titanium silicide.

US Patent:

48928453, Jan 9, 1990

Filed:

Aug 31, 1984

Appl. No.:

6/646559

Inventors:

Jeffrey M. Bridges - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21316

US Classification:

437195

Abstract:

A method for fabricating contacts in a semiconductor substrate includes forming a thin buffer oxide layer (26) over a substrate (10) with active devices defined therein. Access openings (28), (30) and (32) are then formed in the thin oxide layer (26) and then aluminum columnar contacts (38), (40) and (42) formed therein with a predetermined height. A thick oxide layer of phosphorous silicate glass (50) is then formed over the built-up structure. A planarizing resist layer (52) is formed over top of the structure with a substantially thinner area defined proximate the upper surfaces of the columnar contacts (38, 40, 42). The thin areas (54, 56, 58) are removed by selectively etching away the upper surface of the resist layer (52) by an excited plasma process. The structure is then subjected to a phosphorous selective etch to remove only those portions of the thick oxide layer (52') proximate the upper surfaces of the columnar contacts (38, 40, 42). Interconnects are then formed on the surface for connection with the exposed surface of the columnar contacts.