Jeffrey L Mackey

US Patent:

7046339, May 16, 2006

Filed:

Mar 5, 2004

Appl. No.:

10/794339

Inventors:

William A. Stanton - Boise ID, US
Jeffrey L. Mackey - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/72
G02B 3/00

US Classification:

355 71, 359650

Abstract:

A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Descriptions and depictions of specific DOE's are provided. Additionally, a pupilgram having a particular pattern, and methods for forming the pupilgram, are discussed.

US Patent:

7053987, May 30, 2006

Filed:

May 10, 2005

Appl. No.:

11/125496

Inventors:

Jeffrey L. Mackey - Boise ID, US
Willilam A. Stanton - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/72
G03B 27/42

US Classification:

355 69, 355 53, 355 71

Abstract:

Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.

US Patent:

7130022, Oct 31, 2006

Filed:

Mar 17, 2006

Appl. No.:

11/378229

Inventors:

Jeffrey L. Mackey - Boise ID, US
William A. Stanton - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/72
G03B 27/42

US Classification:

355 69, 355 53

Abstract:

Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.

US Patent:

7283205, Oct 16, 2007

Filed:

Jan 19, 2005

Appl. No.:

11/038673

Inventors:

Jeffrey L. Mackey - Boise ID, US
William A. Stanton - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/54
G03B 27/72
G02B 27/44

US Classification:

355 67, 355 71, 359565

Abstract:

A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

US Patent:

7538858, May 26, 2009

Filed:

Jan 11, 2006

Appl. No.:

11/329755

Inventors:

Jeffrey L. Mackey - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/02
G03B 27/52

US Classification:

355 78, 355 55

Abstract:

Systems and methods for near-field photolithography utilize surface plasmon resonances to enable imaging of pattern features that exceed the diffraction limit. An example near-field photolithography system includes a plasmon superlens template including a plurality of opaque features to be imaged onto photosensitive material and a metal plasmon superlens. The opaque features and the metal superlens are separated by a polymer spacer layer. Light propagates through the superlens template to form an image of the opaque features on the other side of the superlens. An intermediary layer including solid or liquid material is interposed between the superlens and a photoresist-coated semiconductor wafer to reduce damage resulting from contact between the superlens template and the photoresist-coated semiconductor wafer.

US Patent:

7760329, Jul 20, 2010

Filed:

Sep 20, 2007

Appl. No.:

11/858419

Inventors:

Jeffrey L. Mackey - Boise ID, US
William A. Stanton - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

G03B 27/72
G03B 27/54

US Classification:

355 71, 355 67

Abstract:

A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

US Patent:

7823440, Nov 2, 2010

Filed:

Aug 16, 2007

Appl. No.:

11/839688

Inventors:

Jeffrey L. Mackey - Boise ID, US
Gurtej S. Sandhu - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B23Q 17/09

US Classification:

73104, 73150 R

Abstract:

Metrology systems, tools, and methods that characterize one or more layers of a microelectronic workpiece are disclosed herein. In one embodiment, a system for characterizing thickness and topography of a workpiece layer includes a layer thickness instrument configured to measure a thickness of a first workpiece layer at individual sampling sites, a surface topography instrument configured to measure a relative surface height of the first layer at the individual sampling sites, and a processing unit communicatively coupled to receive thickness and topography measurements and operable to output layer data that includes individual thickness measurements combined with individual topography measurements at workpiece coordinates corresponding to the individual sampling sites. In another embodiment, the system further includes an output device communicatively coupled with the processing unit and operable to graphically display a stratigraphic cross-section corresponding to the output layer data.

US Patent:

20050078293, Apr 14, 2005

Filed:

Oct 14, 2003

Appl. No.:

10/684794

Inventors:

Jeffrey Mackey - Boise ID, US
William Stanton - Boise ID, US

International Classification:

G03B027/72

US Classification:

355069000, 355071000, 355053000, 355067000, 250548000

Abstract:

Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.