Jeffrey R Mckee

US Patent:

6528888, Mar 4, 2003

Filed:

Feb 2, 2001

Appl. No.:

09/776212

Inventors:

Chih-Chen Cho - Richardson TX
Jeffrey A. McKee - Grapevine TX
William R. McKee - Plano TX
Isamu Asano - Iruma, JP
Robert Y. Tsu - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2348

US Classification:

257775, 257306, 257750, 257773

Abstract:

An integrated circuit. The circuit includes a memory cell array including wordlines formed on a substrate and bitlines and capacitors formed over the wordlines. The bitlines have a first thickness and pitch. The circuit also includes circuits peripheral to the array including transistors formed in the substrate and conductors over the transistors. The conductors have a second thickness and pitch. The circuit is further characterized in that the bitlines and conductors are formed in a common conductive layer. In further embodiments, the first thickness and pitch are smaller than the second thickness and pitch.

US Patent:

8031249, Oct 4, 2011

Filed:

Jan 8, 2008

Appl. No.:

11/971143

Inventors:

Jeffrey A. McKee - Lake Oswego OR, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H04N 3/14
H04N 5/335

US Classification:

348308, 348294

Abstract:

An active pixel sensor (APS) comprises a regular repeating pattern of geometrically similar pixel regions, active pixels of which have photodiodes formed therein. A remainder of the geometrically similar regions has electrical components shared amongst neighboring photodiodes, such as for collecting and amplifying signals from the photodiodes. A 4-way sharing arrangement is shown, with four active pixel regions aligned in a column and the shared electrical components in a pixel region, the pixel region being shaped and sized similarly to the active pixel regions, in an adjacent column.

US Patent:

8471941, Jun 25, 2013

Filed:

Sep 7, 2011

Appl. No.:

13/227217

Inventors:

Jeffrey A. McKee - Lake Oswego OR, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H04N 3/14

US Classification:

348308

Abstract:

An active pixel sensor (APS) comprises a regular repeating pattern of geometrically similar pixel regions, active pixels of which have photodiodes formed therein. A remainder of the geometrically similar regions has electrical components shared amongst neighboring photodiodes, such as for collecting and amplifying signals from the photodiodes. A 4-way sharing arrangement is shown, with four active pixel regions aligned in a column and the shared electrical components in a pixel region, the pixel region being shaped and sized similarly to the active pixel regions, in an adjacent column.

US Patent:

8476681, Jul 2, 2013

Filed:

Mar 17, 2011

Appl. No.:

13/050557

Inventors:

Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US

Assignee:

Sionyx, Inc. - Beverly MA

International Classification:

H01L 27/148

US Classification:

257228, 438 71

Abstract:

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

US Patent:

20110227138, Sep 22, 2011

Filed:

Sep 17, 2010

Appl. No.:

12/885158

Inventors:

Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Leonard Forbes - Corvallis OR, US
Chintamani Palsule - Lake Oswego OR, US

International Classification:

H01L 31/0232
H01L 31/113
H01L 31/18

US Classification:

257291, 257432, 257290, 438 71, 257E31128, 257E31085

Abstract:

Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

US Patent:

20110260059, Oct 27, 2011

Filed:

Apr 21, 2011

Appl. No.:

13/091969

Inventors:

Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Martin U. Pralle - Wayland MA, US

International Classification:

H01L 27/146
H01L 27/148
H01L 27/144

US Classification:

250330, 2503384, 257229, 257E2715

Abstract:

A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

US Patent:

20120313204, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493891

Inventors:

Homayoon Haddad - Beaverton OR, US
Jeffrey McKee - Tualatin OR, US
Jutao Jiang - Tigard OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US

International Classification:

H01L 31/0232
H01L 31/18

US Classification:

257432, 438 71, 257E31127

Abstract:

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

US Patent:

20120313205, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493918

Inventors:

Homayoon Haddad - Beaverton OR, US
Jeffrey McKee - Tualatin OR, US
Jutao Jiang - Tigard OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvalils OR, US

International Classification:

H01L 31/0236
H01L 31/18
H01L 27/148

US Classification:

257432, 438 71, 257E3113, 257E27151, 257E31128

Abstract:

Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.