Jeffrey A Tobin

US Patent:

6468404, Oct 22, 2002

Filed:

Jan 23, 2001

Appl. No.:

09/768863

Inventors:

Jean Qing Lu - Palo Alto CA
Tom Yu - San Leandro CA
Jeffrey Tobin - Mountain View CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

2041923, 20429816, 20419212, 20419215, 20419222

Abstract:

A PVD system comprises a hollow cathode magnetron with a capability of producing a high magnetic field for PVD and a low magnetic field for pasting. The high magnetic field is used for PVD and causes an optimal uniform film to form on a substrate but redeposits some metals onto a top portion of a target within the magnetron. The low magnetic field erodes redeposited materials from a top portion of a target within the magnetron.

US Patent:

6471831, Oct 29, 2002

Filed:

Jan 9, 2001

Appl. No.:

09/757552

Inventors:

Jean Qing Lu - Palo Alto CA
Tom Yu - San Leandro CA
Linda Stenzel - Mt. Hermon CA
Jeffrey Tobin - Mountain View CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

20419212, 20429812, 20429814, 20429816, 20429817, 20429818, 2042982, 20429821, 20429822, 20429811

Abstract:

A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

US Patent:

6589398, Jul 8, 2003

Filed:

Mar 28, 2002

Appl. No.:

10/112264

Inventors:

Jean Qing Lu - Palo Alto CA
Jeffrey Andrew Tobin - Mountain View CA
Linda Lee Stenzel - Mount Hermon CA
Lananh Pham - Fremont CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

20419212, 20419215, 20419217, 20419218, 20419222, 20429812, 2042982

Abstract:

The present invention pertains to methods for preventing metal or metal-derived material from flaking during sputter processing of substrates. Methods of the invention are particularly useful for non-planar sputter targets. The magnetic field configuration in a sputter apparatus is modulated during a pasting process. Flaking from regions of the target, shield, or other internal components of the sputter apparatus is inhibited by pasting methods which include encapsulation and optionally removal of material, for example by erosion via high density plasma.

US Patent:

6613199, Sep 2, 2003

Filed:

Oct 25, 2001

Appl. No.:

10/033165

Inventors:

Jeffrey A. Tobin - Mountain View CA
Jean Qing Lu - Palo Alto CA
Thomas Mountsier - San Jose CA
Hong Mei Zhang - San Jose CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

20419212, 20429812, 20429816, 20429818, 20429819, 20429821

Abstract:

A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.

US Patent:

20090084317, Apr 2, 2009

Filed:

Sep 28, 2007

Appl. No.:

11/864053

Inventors:

Dien-Yeh Wu - San Jose CA, US
Schubert S. Chu - San Francisco CA, US
Paul Ma - Santa Clara CA, US
Jeffrey Tobin - Mountain View CA, US

International Classification:

C23C 16/00

US Classification:

118728

Abstract:

An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber.

US Patent:

20100305884, Dec 2, 2010

Filed:

May 17, 2010

Appl. No.:

12/781353

Inventors:

Joseph Yudovsky - Campbell CA, US
Jeffrey Tobin - Mountain View CA, US
Patricia M. Liu - Saratoga CA, US
Faruk Gungor - San Jose CA, US
Tai T. Ngo - Dublin CA, US
Travis Tesch - Santa Clara CA, US
Kenric Choi - Santa Clara CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

G01N 7/00

US Classification:

702 50, 73 3104

Abstract:

Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

US Patent:

20110278260, Nov 17, 2011

Filed:

May 14, 2010

Appl. No.:

12/780531

Inventors:

Canfeng Lai - Fremont CA, US
Jeffrey Tobin - Mountain View CA, US
Peter I. Porshnev - San Jose CA, US
Jose Antonio Marin - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/306
C23F 1/00
B05D 1/00
C23C 16/00
H05H 1/24

US Classification:

216 68, 15634548, 118723 I, 15634533, 427569

Abstract:

A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

US Patent:

20130014894, Jan 17, 2013

Filed:

Jul 26, 2011

Appl. No.:

13/190985

Inventors:

CANFENG LAI - Fremont CA, US
DAVID E. ABERLE - Milpitas CA, US
MICHAEL P. KAMP - San Ramon CA, US
HENRY BARANDICA - San Jose CA, US
MARTIN A. HILKENE - Gilroy CA, US
MATTHEW D. SCOTNEY-CASTLE - Morgan Hill CA, US
JEFFREY TOBIN - Mountain View CA, US
DOUGLAS H. BURNS - Saratoga CA, US
LARA HAWRYLCHAK - Gilroy CA, US
PETER I. PORSHNEV - Poway CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23F 1/08
C23C 16/52
C23C 16/505

US Classification:

15634528, 15634548, 118723 I, 118696

Abstract:

Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.