Jennan Yu

US Patent:

7149234, Dec 12, 2006

Filed:

Aug 27, 2003

Appl. No.:

10/650578

Inventors:

Palash P. Das - Vista CA, US
Jennan Yu - San Diego CA, US
Stuart L. Anderson - San Diego CA, US
Helmut Schillinger - Munich, DE
Tobias Pflanz - Munich, DE
Claus Strowitzki - Gilching, DE
Claudia A. Hartmann - Mering, DE
Stephan Geiger - Herbertshausen, DE
Brett D. Smith - Cody WY, US
William N. Partlo - Poway CA, US

Assignee:

Cymer, Inc. - San Diego CA

International Classification:

H01S 3/22

US Classification:

372 50, 372 55

Abstract:

A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an Fgas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.

US Patent:

20020012376, Jan 31, 2002

Filed:

Jul 30, 2001

Appl. No.:

09/837035

Inventors:

Palash Das - Vista CA, US
Jennan Yu - San Diego CA, US
Stuart Anderson - San Diego CA, US
Helmut Schillinger - Muenchen, DE
Tobias Pflanz - Munchen, DE
Claus Strowitzki - Gilching, DE
Claudia Hartmann - Mering, DE
Stephan Geiger - Herbertshausen, DE
Brett Smith - Cody WY, US
William Partlo - Poway CA, US

International Classification:

H01S003/22
H01S003/223

US Classification:

372/058000

Abstract:

A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an Fgas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.