Jennifer Van Anne

US Patent:

20220301862, Sep 22, 2022

Filed:

Sep 10, 2020

Appl. No.:

17/642185

Inventors:

- TEMPE AZ, US
WILLIAM ROBERT ENTLEY - GILBERT AZ, US
DANIEL P. SPENCE - CARLSBAD CA, US
RAYMOND NICHOLAS VRTIS - CARLSBAD CA, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
C23C 16/40
C23C 16/513

Abstract:

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

US Patent:

20220293417, Sep 15, 2022

Filed:

Aug 14, 2020

Appl. No.:

17/635984

Inventors:

- TEMPE AZ, US
SURESH K. RAJARAMAN - TAIPEI, TW
WILLIAM ROBERT ENTLEY - GILBERT AZ, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
C23C 16/42
C23C 16/56

Abstract:

A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the formula RHSi as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

US Patent:

20230103933, Apr 6, 2023

Filed:

Mar 29, 2021

Appl. No.:

17/907236

Inventors:

- TEMPE AZ, US
ENTLEY WILLIAM ROBERT - GILBERT AZ, US
DANIEL P. SPENCE - CARLSBAD CA, US
RAYMOND NICHOLAS VRTIS - CARLSBAD CA, US
JENNIFER LYNN ANNE ACHTYL - CHANDLER AZ, US
ROBERT GORDON RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

H01L 21/02
B05D 1/00
C07F 7/18

Abstract:

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from 2.70 to 3.50, an elastic modulus of from 6 to 36 GPa, and an at. % carbon from 10 to 36 as measured by XPS.

US Patent:

20200354386, Nov 12, 2020

Filed:

Aug 29, 2018

Appl. No.:

16/640529

Inventors:

- Tempe AZ, US
Raymond Nicholas Vrtis - Tempe AZ, US
Xinjian Lei - Tempe AZ, US
Jennifer Lynn Anne Achtyl - Tempe AZ, US
William Robert Entley - Tempe AZ, US

International Classification:

C07F 7/18
C23C 16/40
C23C 16/56
C23C 16/517
C23C 16/448
H01L 21/02

Abstract:

A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

US Patent:

20200165727, May 28, 2020

Filed:

Nov 26, 2019

Appl. No.:

16/695676

Inventors:

- Tempe AZ, US
Jennifer Lynn Anne Achtyl - Chandler AZ, US
Raymond Nicholas Vrtis - Carefree AZ, US
Robert Gordon Ridgeway - Chandler AZ, US
Xinjian Lei - Vista CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C23C 16/50
C03C 17/30

Abstract:

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane; and applying energy to the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane in the reaction chamber to induce reaction of the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from 2.70 to 3.20, an elastic modulus of from 11 to 25 GPa, and an at. % carbon of from 12 to 31 as measured by XPS.

US Patent:

20200048286, Feb 13, 2020

Filed:

Oct 18, 2019

Appl. No.:

16/657105

Inventors:

- Tempe AZ, US
Raymond Nicholas Vrtis - Tempe AZ, US
Robert Gordon Ridgeway - Tempe AZ, US
William Robert Entley - Tempe AZ, US
Jennifer Lynn Anne Achtyl - Tempe AZ, US
Xinjian Lei - Tempe AZ, US
Daniel P. Spence - Tempe AZ, US

International Classification:

C07F 7/18
C23C 16/50
C23C 16/30

Abstract:

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

US Patent:

20190385840, Dec 19, 2019

Filed:

Jun 18, 2019

Appl. No.:

16/443978

Inventors:

- Tempe AZ, US
Jennifer Lynn Anne Achtyl - Tempe AZ, US
Raymond N. Vrtis - Tempe AZ, US
Xinjian Lei - Tempe AZ, US
William Robert Entley - Tempe AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

H01L 21/02
C07F 7/08
C23C 16/50
C23C 16/56

Abstract:

A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

US Patent:

20190244810, Aug 8, 2019

Filed:

Feb 6, 2019

Appl. No.:

16/268660

Inventors:

- Tempe AZ, US
Robert Gordon Ridgeway - Tempe AZ, US
Jennifer Lynn Anne Achtyl - Tempe AZ, US
William Robert Entley - Tempe AZ, US
Dino Sinatore - Tempe AZ, US
Kathleen Esther Theodorou - Tempe AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

H01L 21/02

Abstract:

According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: