Jennifer A Antonell from 7306 Toby Ct, Summerfield, NC 27358, age 50, Phone: 3366449312

Chemical Mechanical Polishing Of Dual Orientation Polycrystalline Materials
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US Patent:

20030162481, Aug 28, 2003
Filed:

Apr 12, 2002
Appl. No.:

10/121370
Inventors:

Michael Antonell - Summerfield NC, US
Jennifer Antonell - Summerfield NC, US
Erik Houge - Orlando FL, US
Ryan Maynard - Orlando FL, US
Darrell Simpson - Gotha FL, US
International Classification:

B24B001/00
US Classification:

451/041000
Abstract:

A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.

Jennifer A Antonell