Jennifer E Morrison

US Patent:

6828650, Dec 7, 2004

Filed:

May 31, 2002

Appl. No.:

10/160940

Inventors:

Patrice Parris - Phoenix AZ
Richard J De Souza - Tempe AZ
Jennifer H. Morrison - Chandler AZ
Moaniss Zitouni - Gilbert AZ
Xin Lin - Chandler AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2900

US Classification:

257518, 257378, 257514, 257565

Abstract:

A Bipolar Junction Transistor (BJT) that reduces the variation in the current gain through the use of a trench pullback structure. The trench pullback structure is comprised of a trench and an active region. The trench reduces recombination in the emitter-base region through increasing the distance charge carriers must travel between the emitter and the base. The trench also reduces recombination by reducing the amount of interfacial traps that the electrons injected from the emitter are exposed to. Further, the trench is pulled back from the emitter allowing an active region where electrons injected from a sidewall of the emitter can contribute to the overall injected emitter current. This structure offers the same current capability and current gain as a device without the trench between the emitter and the base while reducing the current gain variation.

US Patent:

7078785, Jul 18, 2006

Filed:

Sep 23, 2003

Appl. No.:

10/668694

Inventors:

Anthony Ciancio - Gilbert AZ, US
Mark D. Griswold - Chandler AZ, US
Amudha R. Irudayam - Chandler AZ, US
Jennifer H. Morrison - Chandler AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/00
H01L 29/76
H01L 29/94

US Classification:

257532, 257306

Abstract:

By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.

US Patent:

7211477, May 1, 2007

Filed:

May 6, 2005

Appl. No.:

11/124469

Inventors:

Edouard D. de Frésart - Tempe AZ, US
Richard J. De Souza - Tempe AZ, US
Xin Lin - Phoenix AZ, US
Jennifer H. Morrison - Chandler AZ, US
Patrice M. Parris - Phoenix AZ, US
Moaniss Zitouni - Gilbert AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/336
H01L 21/8234

US Classification:

438197, 438223, 438301

Abstract:

Methods and apparatus are provided for a MOSFET () exhibiting increased source-drain breakdown voltage (BVdss). Source (S) () and drain (D) () are spaced apart by a channel () underlying a gate () and one or more carrier drift spaces (′) serially located between the channel () and the source (′) or drain (′). A buried region (′) of the same conductivity type as the drift space (′) and the source (′) or drain (′) is provided below the drift space (′), separated therefrom in depth by a narrow gap (′) and ohmically coupled to the source (′) or drain (′). Current flow () through the drift space produces a potential difference (Vt) across this gap (′). As the S-D voltage (Vo) and current (, Io) increase, this difference (Vt) induces high field conduction between the drift space (′) and the buried region (′) and diverts part (, It) of the S-D current (, Io) through the buried region (′) and away from the near surface portions of the drift space (′) where breakdown generally occurs. Thus, BVdss is increased.

US Patent:

7301187, Nov 27, 2007

Filed:

Mar 21, 2007

Appl. No.:

11/689313

Inventors:

Edouard D. Defresart - Tempe AZ, US
Richard J. Desouza - Tempe AZ, US
Xin Lin - Phoenix AZ, US
Jennifer H. Morrison - Chandler AZ, US
Patrice M. Parris - Phoenix AZ, US
Moaniss Zitouni - Gilbert AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119

US Classification:

257288, 257341, 257401, 257E2913

Abstract:

Methods and apparatus are provided for a MOSFET () exhibiting increased source-drain breakdown voltage (BVdss). Source (S) () and drain (D) () are spaced apart by a channel () underlying a gate () and one or more carrier drift spaces (′) serially located between the channel () and the source (′) or drain (′). A buried region (′) of the same conductivity type as the drift space (′) and the source (′) or drain (′) is provided below the drift space (′), separated therefrom in depth by a narrow gap (′) and ohmically coupled to the source (′) or drain (′). Current flow () through the drift space produces a potential difference (Vt) across this gap (′). As the S-D voltage (Vo) and current (, Io) increase, this difference (Vt) induces high field conduction between the drift space (′) and the buried region (′) and diverts part (, It) of the S-D current (, Io) through the buried region (′) and away from the near surface portions of the drift space (′) where breakdown generally occurs. Thus, BVdss is increased.

US Patent:

7528015, May 5, 2009

Filed:

Jun 28, 2005

Appl. No.:

11/169962

Inventors:

Patrice M. Parris - Phoenix AZ, US
Weize Chen - Phoenix AZ, US
John M. McKenna - Chandler AZ, US
Jennifer H. Morrison - Chandler AZ, US
Moaniss Zitouni - Gilbert AZ, US
Richard J. De Souza - Tempe AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/82
H01L 21/44
H01L 21/31

US Classification:

438131, 438600, 438770, 438981, 257E21625

Abstract:

A tunable antifuse element () and method of fabricating the tunable antifuse element, including a substrate material () having an active area () formed in a surface, a gate electrode () having at least a portion positioned above the active area (), and a dielectric layer () disposed between the gate electrode () and the active area (). The dielectric layer () including the fabrication of one of a tunable stepped structure (). During operation, a voltage applied between the gate electrode () and the active area () creates a current path through the dielectric layer () and a rupture of the dielectric layer () in a plurality of rupture regions (). The dielectric layer () is tunable by varying the stepped layer thicknesses and the geometry of the layer.

US Patent:

7700996, Apr 20, 2010

Filed:

Jan 29, 2009

Appl. No.:

12/361944

Inventors:

Patrice M. Parris - Phoenix AZ, US
Weize Chen - Phoenix AZ, US
John M. McKenna - Chandler AZ, US
Jennifer H. Morrison - Chandler AZ, US
Moaniss Zitouni - Gilbert AZ, US
Richard J. De Souza - Tempe AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/94

US Classification:

257324, 257529, 257530, 257E29135, 257E29255

Abstract:

A tunable antifuse element () includes a substrate material () having an active area () formed in a surface, a gate electrode () having at least a portion positioned above the active area (), and a dielectric layer () disposed between the gate electrode () and the active area (). The dielectric layer () includes a tunable stepped structure (). During operation, a voltage applied between the gate electrode () and the active area () creates a current path through the dielectric layer () and a rupture of the dielectric layer () in a rupture region (). The dielectric layer () is tunable by varying the stepped layer thicknesses and the geometry of the layer.

US Patent:

20040075144, Apr 22, 2004

Filed:

Oct 16, 2002

Appl. No.:

10/272336

Inventors:

Moaniss Zitouni - Gilbert AZ, US
Edouard de Fresart - Tempe AZ, US
Richard De Souza - Tempe AZ, US
Xin Lin - Phoenix AZ, US
Jennifer Morrison - Chandler AZ, US
Patrice Parris - Phoenix AZ, US

Assignee:

Motorola, Inc.

International Classification:

H01L023/62
H01L021/336

US Classification:

257/355000, 257/358000, 257/375000, 438/298000, 438/450000

Abstract:

A structure protects CMOS logic from substrate minority carrier injection caused by the inductive switching of a power device. A single Integrated Circuit (IC) supports one or more power MOSFETs and one or more arrays of CMOS logic. A highly doped ring is formed between the drain of the power MOSFET and the CMOS logic array to provide a low resistance path to ground for the injected minority carriers. Under the CMOS logic is a highly doped buried layer to form a region of high recombination for the injected minority carriers. One or more CMOS devices are formed above the buried layer. The substrate is a resistive and the injected current is attenuated. The well in which the CMOS devices rest forms a low resistance ground plane for the injected minority carriers.

US Patent:

20060134862, Jun 22, 2006

Filed:

Dec 17, 2004

Appl. No.:

11/015110

Inventors:

Patrice Parris - Phoenix AZ, US
Edouard de Fresart - Tempe AZ, US
Richard De Souza - Tempe AZ, US
Jennifer Morrison - Chandler AZ, US

International Classification:

H01L 21/336

US Classification:

438257000

Abstract:

A non-volatile memory bitcell structure is disclosed that includes a dual capacitor structure. A first metal-insulator-metal (MIM) capacitor having a first capacitance value includes a first top plate, a first bottom plate, and a first dielectric disposed in-between the first top plate and the first bottom plate. A second metal-insulator-metal (MIM) capacitor having a second capacitance value includes a second top plate, a second bottom plate, and a second dielectric disposed in-between the second top plate and the second bottom plate. An element of the first MIM capacitor is electrically coupled in common with an element of the second MIM capacitor. In addition, the first capacitance value is greater than the second capacitance value.