Jennifer Dawn Ross

US Patent:

56573359, Aug 12, 1997

Filed:

Nov 1, 1993

Appl. No.:

8/146502

Inventors:

Michael Rubin - Berkeley CA
Nathan Newman - Montara CA
Tracy Fu - Berkeley CA
Jennifer Ross - Pleasanton CA
James Chan - Berkeley CA

Assignee:

The Regents, University of California - Oakland CA

International Classification:

H01L 3300

US Classification:

372 44

Abstract:

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5. times. 10. sup. 11 /cm. sup. 3 and hole mobilities of about 500 cm. sup. 2 /V-sec, measured at 250. degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.