Jennifer J Wang

US Patent:

7081415, Jul 25, 2006

Filed:

Feb 18, 2004

Appl. No.:

10/782538

Inventors:

Jennifer Wang - Redondo Beach CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 21/302

US Classification:

438714, 438710, 438712, 216 72

Abstract:

A method of dry plasma etching a semiconductor structure (), having at least one semiconductor material layer (), on a semiconductor wafer (), involving a dry plasma reaction gas mixture () being chemically selected for, and having an etch rate corresponding to, each semiconductor material layer (); dividing the semiconductor structure () into a masked portion () and an unmasked portion (); and sequentially exposing the unmasked portion () of the semiconductor structure () to the dry plasma reaction gas mixture ().

US Patent:

7582518, Sep 1, 2009

Filed:

Nov 14, 2006

Appl. No.:

11/598817

Inventors:

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Gerry Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Mike Barsky - Sherman Oaks CA, US
Rich Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Space & Mission Systems Corp. - Los Angeles CA

International Classification:

H01L 21/338

US Classification:

438182, 438577, 438579, 257E21205, 257E21587

Abstract:

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

US Patent:

7709860, May 4, 2010

Filed:

Apr 29, 2009

Appl. No.:

12/432113

Inventors:

Linh Dang - Lawndale CA, US
Wayne Yoshida - Hermosa Beach CA, US
Xiaobing Mei - Manhattan Beach CA, US
Jennifer Wang - Redondo Beach CA, US
Po-Hsin Liu - Anaheim CA, US
Jane Lee - Torrance CA, US
Weidong Liu - San Marino CA, US
Michael Barsky - Sherman Oaks CA, US
Richard Lai - Redondo Beach CA, US

Assignee:

Northrop Grumman Space & Mission Systems Corp. - Los Angeles CA

International Classification:

H01L 29/778

US Classification:

257194, 257E29246

Abstract:

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

US Patent:

7262137, Aug 28, 2007

Filed:

Feb 18, 2004

Appl. No.:

10/782723

Inventors:

Jennifer Wang - Redondo Beach CA, US
Mike Barsky - Sherman Oaks CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 21/311

US Classification:

438700, 438718

Abstract:

Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant () and a nitrogen gas () that selectively etches a compound semiconductor material () faster than the front-side metal layers (A)(B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material () in both X () and Y () crystalline directions without undercutting the top of a via-opening.

US Patent:

20050181618, Aug 18, 2005

Filed:

Feb 17, 2004

Appl. No.:

10/781353

Inventors:

Jennifer Wang - Redondo Beach CA, US
Mike Barsky - Sherman Oaks CA, US

Assignee:

Northrop Grumman Space & Mission Systems Corporation - Redondo Beach CA

International Classification:

H01L021/4763
H01L021/302
H01L021/44
H01L021/461

US Classification:

438725000, 438713000, 438714000

Abstract:

An improved etching process for creating dimensionally accurate sub-micron and micron via-openings is disclosed. Specifically, this invention discloses a via etching process for a polymer layer () deposited on a semiconductor substrate () comprising the steps of: placing the semiconductor substrate comprising a polymer layer () deposited on the semiconductor substrate, a hard-mask () deposited on the polymer layer () and a photoresist mask () deposited on the hard-mask (). The invention further, discloses performing a hard-mask opening step () comprising releasing a first fluoride gas () into the chamber. Furthermore, performing a polymer etching step () comprising releasing a second fluoride gas () into the chamber is disclosed. The invention also includes a hard-mask removal and tapered via step () to increase process margin.

US Patent:

20170057379, Mar 2, 2017

Filed:

Aug 28, 2015

Appl. No.:

14/839735

Inventors:

- Gardena CA, US
Jennifer Hwa-Yun WANG - San Gabriel CA, US

Assignee:

Faraday&Future Inc. - Gardena CA

International Classification:

B60N 2/02
B60N 2/48
B60N 2/12
B60N 2/00
B60N 2/06

Abstract:

A control system is disclosed for enhancing the visibility of a driver of a vehicle. The control system may include a sensor configured to generate a signal indicative of a weight placed on a passenger seat and at least one motor configured to adjust a position of the passenger seat. The control system may also include a controller in communication with the sensor and the at least one motor. The controller may be configured to receive the signal from the sensor, determine that the passenger seat is unoccupied based on the signal, and automatically generate a command signal directed to the at least one motor to adjust the passenger seat to a prospective position.