Jenny C T Lin

US Patent:

6905541, Jun 14, 2005

Filed:

May 27, 2003

Appl. No.:

10/447255

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - San Jose CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B025/02

US Classification:

117 86, 117 90, 117 91, 117104, 117105, 117952, 118715, 118718

Abstract:

A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.

US Patent:

7026238, Apr 11, 2006

Filed:

Jan 17, 2002

Appl. No.:

10/052681

Inventors:

Ming Xi - Milpitas CA, US
Paul Frederick Smith - San Jose CA, US
Ling Chen - Sunnyvale CA, US
Michael X. Yang - Palo Alto CA, US
Mei Chang - Saratoga CA, US
Fusen Chen - Cupertino CA, US
Christophe Marcadal - Santa Clara CA, US
Jenny C. Lin - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438625, 438639, 438643, 438648

Abstract:

Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

US Patent:

7063862, Jun 20, 2006

Filed:

Jun 3, 2003

Appl. No.:

10/454240

Inventors:

Jenny Li-Ying Lin - San Jose CA, US
David Wong - Milpitas CA, US

Assignee:

BioKey, Inc. - Fremont CA

International Classification:

A61K 9/20
A61K 31/70

US Classification:

424465, 424468, 424480, 514 29

Abstract:

Embodiments of the invention generally provide pharmaceutical drug compositions, methods of preparing oral drug compositions, such as extended release dosage compositions, and methods for treating infection. More particularly, the invention relates to formulations containing a drug and a carrier material. In one aspect, the invention provides a pharmaceutical formulation including a therapeutically active agent, from about 0. 1% to about 4. 9% by weight of a pharmaceutically acceptable polymer, and from about 0. 1% to about 30% by weight of a pharmaceutically acceptable acid, wherein the pharmaceutical composition have a zero order release profile of the therapeutically active agent. In another aspect, the invention provides methods for preparing and administering a pharmaceutical antibiotic composition in oral dosage form, such as a tablet.

US Patent:

7270709, Sep 18, 2007

Filed:

May 2, 2005

Appl. No.:

11/119681

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - San Jose CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 21/02

US Classification:

117201, 117202, 118715 R, 118719

Abstract:

A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.

US Patent:

7524374, Apr 28, 2009

Filed:

May 27, 2004

Appl. No.:

10/590448

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - Palo Alto CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 21/02

US Classification:

117200, 117201, 117202, 118715, 118716

Abstract:

Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (). The apparatus includes a canister () having a sidewall (), a top portion and a bottom portion. The canister () defines an interior volume () having an upper region () and a lower region (). In one embodiment, the apparatus further includes a heater () partially surrounding the canister (). The heater () creates a temperature gradient between the upper region () and the lower region (). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.

US Patent:

7588736, Sep 15, 2009

Filed:

May 16, 2006

Appl. No.:

11/383642

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - San Jose CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 15/08

US Classification:

422145, 422139, 422140, 118715

Abstract:

Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

US Patent:

7597758, Oct 6, 2009

Filed:

Aug 31, 2007

Appl. No.:

11/849125

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - San Jose CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 23/08

US Classification:

117201, 117202, 118715

Abstract:

Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

US Patent:

8062422, Nov 22, 2011

Filed:

Feb 13, 2009

Appl. No.:

12/371138

Inventors:

Ling Chen - Sunnyvale CA, US
Vincent W. Ku - Palo Alto CA, US
Hua Chung - San Jose CA, US
Christophe Marcadal - Sunnyvale CA, US
Seshadri Ganguli - Sunnyvale CA, US
Jenny Lin - Saratoga CA, US
Dien-Yeh Wu - San Jose CA, US
Alan Ouye - San Mateo CA, US
Mei Chang - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 25/02

US Classification:

117201, 117200, 117202, 117 68, 117105

Abstract:

Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.