Bing Y Ji

US Patent:

6686594, Feb 3, 2004

Filed:

Oct 29, 2001

Appl. No.:

10/003223

Inventors:

Bing Ji - Allentown PA
Robert Gordon Ridgeway - Quakertown PA
Steven Arthur Rogers - Seoul, KR
Peter James Maroulis - Mertztown PA
John Giles Langan - Pleasanton CA

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

G01J 312

US Classification:

250373, 250372

Abstract:

An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e. g. F , Cl , Br , and I ) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

US Patent:

7055263, Jun 6, 2006

Filed:

Nov 25, 2003

Appl. No.:

10/721719

Inventors:

Dingjun Wu - Macungie PA, US
Bing Ji - Allentown PA, US
Stephen Andrew Motika - Kutztown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

F26B 3/34

US Classification:

34443, 34245

Abstract:

A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

US Patent:

7119032, Oct 10, 2006

Filed:

Aug 23, 2004

Appl. No.:

10/924321

Inventors:

Bing Ji - Allentown PA, US
Stephen Andrew Motika - Kutztown PA, US
Dingjun Wu - Macungie PA, US
David Allen Roberts - Fogelsville PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438758, 118719, 257E21092

Abstract:

This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

US Patent:

7285154, Oct 23, 2007

Filed:

Nov 24, 2004

Appl. No.:

10/996743

Inventors:

Timothy Christopher Golden - Allentown PA, US
Bing Ji - Allentown PA, US
Stephen Andrew Motika - Kutztown PA, US
Thomas Stephen Farris - Bethlehem PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B01D 53/02

US Classification:

95 96, 95 97, 95 98, 95102, 95104, 95105, 95106, 95127, 95148

Abstract:

A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/Nselectivity ratio 50% and an initial xenon concentration ≧0. 5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio ≧10. The final xenon concentration is ≧15× the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant ≧50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ≧0. 5%; heating and purging the adsorption vessel to recover xenon having a final concentration ≧15× its initial concentration. Apparatus for performing the process are also described.

US Patent:

7357138, Apr 15, 2008

Filed:

Nov 26, 2003

Appl. No.:

10/723714

Inventors:

Bing Ji - Allentown PA, US
Stephen Andrew Motika - Kutztown PA, US
Ronald Martin Pearlstein - Macungie PA, US
Dingjun Wu - Macungie PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B08B 9/00
B08B 6/00

US Classification:

134 221, 134 11, 216 67, 216 76

Abstract:

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

US Patent:

7371688, May 13, 2008

Filed:

Sep 15, 2004

Appl. No.:

10/942301

Inventors:

Bing Ji - Allentown PA, US
Martin Jay Plishka - Apache Junction AZ, US
Dingjun Wu - Macungie PA, US
Peter Richard Badowski - White Haven PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438710, 438714, 438905, 257E21218, 257E2131, 257E21311

Abstract:

A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

US Patent:

7581549, Sep 1, 2009

Filed:

Jul 12, 2005

Appl. No.:

11/178545

Inventors:

Andrew David Johnson - Doylestown PA, US
Hoshang Subawalla - Spring TX, US
Bing Ji - Allentown PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Robert Gordon Ridgeway - Quakertown PA, US
Peter James Maroulis - Alburtis PA, US
Mark Leonard O'Neill - Allentown PA, US
Aaron Scott Lukas - Washington DC, US
Stephen Andrew Motika - Kutztown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C25F 1/00
C25F 3/30
C25F 5/00

US Classification:

134 12, 4272481

Abstract:

A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

US Patent:

7977390, Jul 12, 2011

Filed:

Aug 22, 2006

Appl. No.:

11/508725

Inventors:

Bing Ji - Pleasanton CA, US
Erik A. Edelberg - Castro Valley CA, US
Takumi Yanagawa - Fremont CA, US
Zhisong Huang - Fremont CA, US
Lumin Li - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22
H01L 21/302

US Classification:

516 67, 216 37, 216 41, 438694, 438706, 438710, 438723, 438725

Abstract:

A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.