Ji Hyun Kim

US Patent:

D504527, Apr 26, 2005

Filed:

Apr 15, 2004

Appl. No.:

29/203560

Inventors:

Ji Young Kim - Niles IL, US

Assignee:

Candle Corporation of America - Des Plaines IL

International Classification:

2601

US Classification:

D26 23

US Patent:

7455748, Nov 25, 2008

Filed:

Jun 20, 2003

Appl. No.:

10/600191

Inventors:

Douglas L. Keil - Fremont CA, US
Lumin Li - Santa Clara CA, US
Eric A. Hudson - Berkeley CA, US
Reza Sadjadi - Saratoga CA, US
Eric H. Lenz - Pleasanton CA, US
Rajinder Dhindsa - San Jose CA, US
Ji Soo Kim - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/00
H01L 21/306
C23C 16/00

US Classification:

15634546, 118723 E

Abstract:

A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.

US Patent:

7838086, Nov 23, 2010

Filed:

Oct 16, 2008

Appl. No.:

12/252887

Inventors:

Douglas L. Keil - Fremont CA, US
Lumin Li - Santa Clara CA, US
Eric A. Hudson - Berkeley CA, US
Reza Sadjadi - Saratoga CA, US
Eric H. Lenz - Pleasanton CA, US
Rajinder Dhindsa - San Jose CA, US
Ji Soo Kim - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 1/02
C23C 16/00

US Classification:

427571, 427569, 118723 E

Abstract:

A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

US Patent:

8277670, Oct 2, 2012

Filed:

May 13, 2008

Appl. No.:

12/120059

Inventors:

Dongho Heo - Fremont CA, US
Ji Soo Kim - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/3205

US Classification:

216 41, 438694, 257E21294, 15634525

Abstract:

A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.