Jia Chen

US Patent:

6927454, Aug 9, 2005

Filed:

Oct 7, 2003

Appl. No.:

10/680820

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L029/76

US Classification:

257336, 257 19, 257 20, 257 24, 257192, 257213, 257344, 257392

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7008547, Mar 7, 2006

Filed:

Mar 7, 2003

Appl. No.:

10/383380

Inventors:

Jia Ming Chen - Plainsboro NJ, US
Yongchi Tian - Princeton NJ, US
Zilan Shen - West Windsor NJ, US
Pradyumna Swain - Franklin Park NJ, US

Assignee:

Sarnoff Corporation - Princeton NJ

International Classification:

B44C 1/22
H01B 13/00
H01L 21/461
G01N 15/06
G01N 27/00

US Classification:

216 11, 216 13, 216 16, 216 41, 216 56, 216 58, 216 72, 216 74, 422 50, 422 681, 422 8201, 422 83, 422 98, 436 43, 436149, 436151, 73 101, 73 102, 438 21, 438400, 438689, 438735, 29592, 295921

Abstract:

Provided is a solid phase array of electrical sensors, each comprising a channel and electrical leads for attaching to a voltage, current or resistivity meter for measuring the voltage, current or resistivity through the pore, wherein the channels are formed of a single substrate.

US Patent:

7378336, May 27, 2008

Filed:

May 9, 2005

Appl. No.:

11/124978

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7465649, Dec 16, 2008

Filed:

Aug 30, 2007

Appl. No.:

11/847384

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7666775, Feb 23, 2010

Filed:

Apr 17, 2008

Appl. No.:

12/104570

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Businesss Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

20020110220, Aug 15, 2002

Filed:

Nov 20, 2001

Appl. No.:

09/989746

Inventors:

Zilan Shen - West Windsor NJ, US
Jia Chen - Plainsboro NJ, US
Heinz Busta - Park Ridge IL, US
Steven Lipp - Cranbury NJ, US

International Classification:

H01J035/08

US Classification:

378/124000, 378/092000

Abstract:

A method and apparatus for delivering localized x-ray radiation to the interior of a body includes a plurality of x-ray sources disposed in a distal portion of a flexible catheter shaft. The plurality of x-ray sources are secured to a flexible cord disposed longitudinally throughout at least a portion of the shaft. The plurality of x-ray sources are electrically coupled to a control circuit for activating specific ones of the plurality of x-ray sources in order to customize the irradiation of the interior of the body.

US Patent:

20200084498, Mar 12, 2020

Filed:

Nov 12, 2019

Appl. No.:

16/681274

Inventors:

- Armonk NY, US
Jia CHEN - New York NY, US
Sarbajit K. Rakshit - Kolkata, IN
Craig M. TRIM - Ventura CA, US

International Classification:

H04N 21/422
H04N 5/44
H04N 21/439
H04N 21/488
H04N 21/442

Abstract:

Systems and methods for a cognitive display control are disclosed. A method includes: obtaining, by a computer device, context information of current content being displayed on a display; generating, by the computer device, a respective attention score for each one of plural users for the current content; receiving, by the computer device, input to change from the current content to new content; determining, by the computer device and based on the receiving, that the attention score of at least one of the plural users exceeds a threshold value; and controlling the display, by the computer device and based on the determining, to display an alert and a prompt to confirm or reject changing to the new content.