Jia J Chen

US Patent:

6927454, Aug 9, 2005

Filed:

Oct 7, 2003

Appl. No.:

10/680820

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L029/76

US Classification:

257336, 257 19, 257 20, 257 24, 257192, 257213, 257344, 257392

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7378336, May 27, 2008

Filed:

May 9, 2005

Appl. No.:

11/124978

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7465649, Dec 16, 2008

Filed:

Aug 30, 2007

Appl. No.:

11/847384

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

7666775, Feb 23, 2010

Filed:

Apr 17, 2008

Appl. No.:

12/104570

Inventors:

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

Assignee:

International Businesss Machines Corporation - Armonk NY

International Classification:

H01L 21/3205

US Classification:

438592, 438593, 257413

Abstract:

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

US Patent:

20220247724, Aug 4, 2022

Filed:

Jan 29, 2021

Appl. No.:

17/162821

Inventors:

- San Francisco CA, US
John Huang - Dublin CA, US
Jia Le Chen - San Francisco CA, US
David Aden - Largo FL, US
Xiaozhong Sun - Fremont CA, US
Jong Lee - Pleasanton CA, US

Assignee:

salesforce.com, inc. - San Francisco CA

International Classification:

H04L 29/06
H04M 3/51
G06Q 30/02

Abstract:

Disclosed herein are system, method, and computer program product embodiments for capturing incoming communications from a sender across multiple channels, and determining whether to include those communications from the sender in an inbox using a waiting room. The waiting room lists unknown senders, and allows a user to add the senders to a blocklist, where the sender's communications are omitted from the user's inbox, or to a passlist, where a new CRM customer record is created for the sender. With the CRM customer record created, future communications from the sender are matched to the CRM customer record and permitted for inclusion in an inbox. This way, recipients can prioritize customers (or other high-value communications) within their inbox based on a corresponding existing CRM customer record, while simplifying the capture of those CRM customer records.

US Patent:

20200163696, May 28, 2020

Filed:

Nov 26, 2018

Appl. No.:

16/200193

Inventors:

- Armonk NY, US
Bruce B. Doris - Slingerlands NY, US
Devendra K. Sadana - Pleasantville NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Jia Chen - New York NY, US
Hariklia Deligianni - Alpine NJ, US

International Classification:

A61B 17/34
G16H 20/40
C12N 5/07
A61B 5/00

Abstract:

An access system having a communication component that interfaces with a first device and a second device, where the first device is located inside or on an entity and coupled to a biological organism of the entity, and where the second device is located outside the entity and a controller component that controls a function of the first device, employing the communication component, to provide treatment to the biological organism of the entity coupled to the first device based on a request received from the second device.

US Patent:

20200164222, May 28, 2020

Filed:

Nov 26, 2018

Appl. No.:

16/199627

Inventors:

- Armonk NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Jia Chen - New York NY, US
Hariklia Deligianni - Alpine NJ, US
Devendra K. Sadana - Pleasantville NY, US

International Classification:

A61N 5/06
A61B 5/04
C30B 25/02
H01L 21/02

Abstract:

Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.

US Patent:

20200083398, Mar 12, 2020

Filed:

Nov 13, 2019

Appl. No.:

16/681974

Inventors:

- Armonk NY, US
Devendra Sadana - Pleasantville NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Bruce Doris - Slingerlands NY, US
Hariklia Deligianni - Alpine NJ, US
Jia Chen - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 33/00
H01L 27/15
H01L 33/62
H01L 33/40
H01L 33/32

Abstract:

A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.