Eric C Anderson - Irving TX, US Ronald J Biediger - Houston TX, US Jie Chen - Houston TX, US Brian Dupre - Houston TX, US Pedro Lory - Antwerp, BE Robert V. Market - Pearland TX, US Keith A. Monk - League City TX, US Michael M. Savage - Pearland TX, US Reginald Tennyson - Missouri City TX, US Brandon M. Young - Germantown TN, US
Assignee:
Pfizer Inc. - New York NY
International Classification:
C07D 333/56
US Classification:
549 57
Abstract:
Provided are compounds that are modulators of CCR9 receptor activity, compositions containing the compounds and methods of use of the compounds and compositions. In certain embodiments, provided are methods for treating or ameliorating diseases associated with modulation of CCR9 receptor activity.
Semiconductor Package With Shunt And Patterned Metal Trace
- Dallas TX, US Rajen Manicon Murugan - Dallas TX, US Liang Wan - Chengdu, CN Makarand Ramkrishna Kulkarni - Dallas TX, US Jie Chen - Plano TX, US Steven Alfred Kummerl - Carrollton TX, US
International Classification:
H01L 23/538 H01L 23/00 H01L 21/48
Abstract:
A semiconductor package includes a first layer including a semiconductor die and a shunt embedded within a first dielectric substrate layer, and metal pillars extending therethrough. The semiconductor package further includes a second layer stacked on the first layer, the second layer including a metal trace patterned on the first dielectric substrate layer, and a second dielectric substrate layer over the metal trace. The metal trace electrically connects a first portion of the shunt to a first metal pillar of the metal pillars and electrically connects a second portion of the shunt to a second metal pillar of the metal pillars. The semiconductor package further includes a base layer opposite the second layer relative the first layer, the base layer forming exposed electrical contact pads for the semiconductor package, the electrical contact pads providing electrical connections to the shunt, the metal pillars, and the semiconductor die.
In examples, a semiconductor package comprises a substrate and multiple columns of semiconductor dies positioned approximately in parallel along a length of the substrate. The package also includes multiple passive components positioned between the multiple columns of semiconductor dies, the multiple passive components angled between 30 and 60 degrees relative to the length of the substrate, a pair of the multiple passive components having a gap therebetween that is configured to permit mold compound flow through capillary action. The package also includes a mold compound covering the substrate, the multiple columns of semiconductor dies, and the multiple passive components.
Semiconductor Device With A Multilayer Package Substrate
A semiconductor device includes a die having an input port and an output port. The semiconductor device also includes a multilayer package substrate with pads on a surface of the multilayer package substrate configured to be coupled to circuit components of a printed circuit board. The multilayer package substrate also includes a passive filter comprising an input port and an output port, and a planar inductor. The planar inductor is coupled to a given pad of the pads of the multilayer package substrate with a first via of the multilayer package substrate and to the input port of the die with a second via of the multilayer package substrate. The planar inductor extends parallel to the surface of the multilayer package substrate.
Hall-Effect Sensor Package With Added Current Path
- Dallas TX, US Yiqi Tang - Allen TX, US Jie Chen - Dallas TX, US Enis Tuncer - Dallas TX, US Usman Mahmood Chaudhry - McKinney TX, US Tony Ray Larson - Tucson AZ, US Rajen Manicon Murugan - Dallas TX, US John Paul Tellkamp - Rockwall TX, US Satyendra Singh Chauhan - Murphy TX, US
A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including ≥1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ≥1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.
Hall-Effect Sensor Package With Added Current Path
- Dallas TX, US Yiqi Tang - Allen TX, US Jie Chen - Dallas TX, US Enis Tuncer - Dallas TX, US Usman Mahmood Chaudhry - McKinney TX, US Tony Ray Larson - Tucson AZ, US Rajen Manicon Murugan - Dallas TX, US John Paul Tellkamp - Rockwall TX, US Satyendra Singh Chauhan - Murphy TX, US
A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including ≥1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ≥1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.
- Dallas TX, US Bo-Hsun PAN - Taoyuan City, TW Yuh-Harng CHIEN - New Taipei City, TW Fu-Hua YU - New Taipei City, TW Steven Alfred KUMMERL - Carrollton TX, US Jie CHEN - Plano TX, US Rajen M. MURUGAN - Dallas TX, US
International Classification:
H01L 23/495 H01L 21/56 H01L 21/48 H01L 23/31
Abstract:
In an example, an apparatus comprises a lead frame that includes a first row of leads, a first pad coupled to the first row of leads, and a second row of leads parallel to the first row of leads. The lead frame also includes a second pad coupled to the second row of leads. The first and second pads are separated by a gap, and each of the first and second pads has a substantially uniform thickness. The apparatus also includes a device coupled to the first and second pads. The first and second pads are exposed to an exterior of the apparatus.
Millimeter Wave Integrated Circuit With Ball Grid Array Package Including Transmit And Receive Channels
Rajen Manicon Murugan - Garland TX, US Minhong Mi - Newton Center MA, US Gary Paul Morrison - Garland TX, US Jie Chen - Denton TX, US Kenneth Robert Rhyner - Roclwall TX, US Stanley Craig Beddingfield - Austin TX, US Chittranjan Mohan Gupta - Richardson TX, US Django Earl Trombley - Dallas TX, US
A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.
Jan 2010 to Nov 2014 Graduate Research AssistantJournal Publications
2013 to 2013Incorporation of Single
2011 to 2011 Development of Fructose DehydrogenaseCHINESE JOURNAL OF INORGANIC CHEMSITRY
2011 to 2011CHINESE JOURNAL OF INORGANIC CHEMSITRY
2010 to 2010Central South University
Sep 2006 to Apr 2009 Graduate Research AssistantJournal of Power Sources
2009 to 2009Electrochemistry Communications
2008 to 2008
Education:
University of Oklahoma Norman, OK Jan 2010 to Nov 2014 Ph.D. in Chemical EngineeringCentral South University 2006 to 2009 M.E., Applied ChemistryCentral South University 2002 to 2006 B.S. in Applied Chemistry
University Of Virginia Transplant Center 1300 Jefferson Park Ave FL 4, Charlottesville, VA 22903 4349248604 (phone), 4349240017 (fax)
UVA Medical Center Inpatient Transplant Surgery & Urology 1215 Lee St 5 W, Charlottesville, VA 22908 4349242338 (phone), 4349242355 (fax)
Languages:
English
Description:
Ms. Chen works in Charlottesville, VA and 1 other location and specializes in Transplant Surgery. Ms. Chen is affiliated with University Of Virginia Medical Center.
atusik, a professor of electrical engineering and computer science at MIT who leads the Computational Design and Fabrication Group within the Computer Science and Artificial Intelligence Laboratory (CSAIL); Meng Jiang, associate professor at the University of Notre Dame; and senior author Jie Chen,