Jill E Becker

US Patent:

7507848, Mar 24, 2009

Filed:

Aug 8, 2005

Appl. No.:

11/199032

Inventors:

Roy G. Gordon - Cambridge MA, US
Jill S. Becker - Cambridge MA, US
Dennis Hausmann - Los Gatos CA, US
Seigi Suh - Cary NC, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

C07F 7/00
C07F 11/00
C23C 16/00

US Classification:

556 52, 556 57, 427255394

Abstract:

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

US Patent:

7560581, Jul 14, 2009

Filed:

Jul 9, 2003

Appl. No.:

10/520456

Inventors:

Roy G. Gordon - Cambridge MA, US
Seigi Suh - Cary NC, US
Jill Becker - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

C07F 11/00
C23C 16/34
H01L 21/44

US Classification:

556 63, 257761, 257763, 427255393, 427255394, 427593, 438681, 438685

Abstract:

Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300 C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

US Patent:

8008743, Aug 30, 2011

Filed:

Sep 27, 2004

Appl. No.:

10/951464

Inventors:

Roy G. Gordon - Cambridge MA, US
Jill Becker - Cambridge MA, US
Dennis Hausmann - Los Gatos CA, US

Assignee:

President And Fellows of Harvard College - Cambridge MA

International Classification:

H01L 21/70

US Classification:

257506, 257E21001, 438787

Abstract:

This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

US Patent:

8202575, Jun 19, 2012

Filed:

Jun 27, 2005

Appl. No.:

11/167570

Inventors:

Douwe J. Monsma - Cambridge MA, US
Jill S. Becker - Cambridge MA, US

Assignee:

Cambridge NanoTech, Inc. - Cambridge MA

International Classification:

C23C 16/44
C23C 16/455

US Classification:

4272557, 118715, 15634533

Abstract:

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

US Patent:

8334016, Dec 18, 2012

Filed:

Mar 19, 2009

Appl. No.:

12/407556

Inventors:

Roy G. Gordon - Cambridge MA, US
Jill S. Becker - Cambridge MA, US
Dennis Hausmann - Los Gatos CA, US
Seigi Suh - Cary NC, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

C23C 16/40

US Classification:

42725531, 42725536, 117 84, 117 88

Abstract:

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

US Patent:

8536070, Sep 17, 2013

Filed:

Jul 22, 2011

Appl. No.:

13/189283

Inventors:

Roy Gerald Gordon - Cambridge MA, US
Jill S. Becker - Cambridge MA, US
Dennis Hausmann - Los Gatos CA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 21/31

US Classification:

438787, 257E2124

Abstract:

This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

US Patent:

20040043149, Mar 4, 2004

Filed:

Sep 2, 2003

Appl. No.:

10/381628

Inventors:

Roy Gordon - Cambridge MA, US
Jill Becker - Cambridge MA, US
Dennis Hausmann - Escobar CA, US
Seigi Suh - Cary NC, US

International Classification:

C23C016/40

US Classification:

427/255310, 427/255380, 427/255394

Abstract:

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

US Patent:

20100166955, Jul 1, 2010

Filed:

Oct 30, 2009

Appl. No.:

12/609319

Inventors:

Jill S. Becker - Cambridge MA, US
Roger R. Coutu - Hooksett NH, US
Douwe J. Monsma - Amsterdam, NL

Assignee:

Cambridge NanoTech Inc. - Cambridge MA

International Classification:

C23C 16/458

US Classification:

4272481, 118728

Abstract:

A reaction chamber assembly suitable for forming thin film deposition layers onto solid substrates includes a reaction chamber and an input plenum for receiving source material from gas source containers and delivering a flow of source material into the reaction chamber uniformly distributed across a substrate support width. An output plenum connected between the reaction chamber and a vacuum pump uniformly removes an outflow of material from the reaction chamber across the substrate support width. The input plenum is configured to expand a volume of the source material and deliver the source material to the substrate support area with uniform source material flow distribution across the substrate support width. The output plenum is configured to remove the outflow material across the entire substrate support width and to compress the volume of outflow material prior to the outflow material exiting the output plenum. The resulting source material flow over substrates supported in the substrate support area is uniformly distributed across the substrate support width and unidirectional with a uniform flow velocity. The configuration of the reaction chamber assembly reduces pump down times.