Jingjing Jing Zhang from Palo Alto, CA, age 51

Medicine Doctors

Jingjing Zhang

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Specialties:

Nephrology

Work:

Jefferson University PhysiciansJefferson Renal Associates
833 Chestnut St STE 700, Philadelphia, PA 19107
2153098638 (phone), 2155034099 (fax)

Education:

Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1993

Conditions:

Chronic Renal Disease
Hypertension (HTN)

Languages:

English
Spanish

Description:

Dr. Zhang graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1993. She works in Philadelphia, PA and specializes in Nephrology. Dr. Zhang is affiliated with Thomas Jefferson University Hospital.

Resumes

Assistant Professor At University Of Zurich

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Location:

Zürich Area, Switzerland

Industry:

Forschung

Work:

University of Zurich - Zurich, Switzerland since Aug 2010
Assistant Professor
McMaster University - Ontario, Canada Aug 2008 - Jul 2010
Postdoctoral Fellow
Purdue University - Lafayette, Indiana Area Sep 2003 - Aug 2008
Instructor, Research and Teaching Assistant

Education:

Purdue University 2003 - 2008
Doctor of Philosophy (Ph.D.), Economics

Languages:

Chinese
English

Jingjing Jj Zhang

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Us Patents

Process Aware Metrology
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US Patent:

8468471, Jun 18, 2013
Filed:

Mar 2, 2012
Appl. No.:

13/411433
Inventors:

Xuefeng Liu - San Jose CA, US
Yung-Ho Alex Chuang - Cupertino CA, US
John Fielden - Los Altos CA, US
Jingjing Zhang - San Jose CA, US
Assignee:

KLA-Tencor Corp. - Milpitas CA
International Classification:

G06F 19/00
G06F 17/50
US Classification:

716 54, 716 52, 716 53, 716 55, 716136, 700110, 700120, 700121
Abstract:

Systems and methods for process aware metrology are provided.

Process Aware Metrology
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US Patent:

20130282340, Oct 24, 2013
Filed:

Jun 17, 2013
Appl. No.:

13/919577
Inventors:

Yung-Ho Alex Chuang - Cupertino CA, US
John Fielden - Los Altos CA, US
Jingjing Zhang - San Jose CA, US
International Classification:

G06F 17/50
US Classification:

703 1
Abstract:

Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

System, Method, And Computer Program Product For Determining A Control Account That Corresponds To An Exposed Account
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US Patent:

20220188849, Jun 16, 2022
Filed:

Mar 2, 2022
Appl. No.:

17/684483
Inventors:

- San Francisco CA, US
Tanya Soluk - San Carlos CA, US
Qingyuan Zhang - Los Altos CA, US
Jingjing Zhang - Redwood City CA, US
Bingxin Mao - Shanghai, CN
Jiaqi Xu - Foster City CA, US
Linjun Chen - San Jose CA, US
International Classification:

G06Q 30/02
G06F 16/245
G06Q 40/02
G06N 5/04
Abstract:

Provided is a method including determining a combined plurality of accounts, determining, for each account of the combined plurality of accounts, aggregate transaction data associated with a plurality of transactions involving the account; determining a first cohort level group including a group of exposed accounts and controls accounts; determining a first segment level group of accounts from the first cohort level group of accounts; generating a prediction model based on a plurality of control accounts that are included in the first segment level group of accounts; identifying a first exposed account of a plurality of exposed accounts; determining a first control account of the plurality of control accounts that corresponds to a first exposed account using the prediction model; and outputting a report comprising data associated with the first control account that corresponds to the first exposed account. Systems and computer program products are also provided.

System, Method, And Computer Program Product For Determining A Control Account That Corresponds To An Exposed Account
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US Patent:

20200294072, Sep 17, 2020
Filed:

Mar 16, 2020
Appl. No.:

16/820074
Inventors:

- San Francisco CA, US
Tanya Soluk - San Carlos CA, US
Qingyuan Zhang - Los Altos CA, US
Jingjing Zhang - Redwood City CA, US
Bingxin Mao - Shanghai, CN
Linjun Chen - San Jose CA, US
Jiaqi Xu - Foster City CA, US
International Classification:

G06Q 30/02
G06F 16/245
G06N 5/04
G06Q 40/02
Abstract:

Provided is a method including determining a combined plurality of accounts, determining, for each account of the combined plurality of accounts, aggregate transaction data associated with a plurality of transactions involving the account; determining a first cohort level group including a group of exposed accounts and controls accounts; determining a first segment level group of accounts from the first cohort level group of accounts; generating a prediction model based on a plurality of control accounts that are included in the first segment level group of accounts; identifying a first exposed account of a plurality of exposed accounts; determining a first control account of the plurality of control accounts that corresponds to a first exposed account using the prediction model; and outputting a report comprising data associated with the first control account that corresponds to the first exposed account. Systems and computer program products are also provided.

Back-Illuminated Sensor And A Method Of Manufacturing A Sensor
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US Patent:

20200194476, Jun 18, 2020
Filed:

Sep 5, 2019
Appl. No.:

16/562396
Inventors:

- Milpitas CA, US
John Fielden - Los Altos CA, US
Jingjing Zhang - San Jose CA, US
David L. Brown - Los Gatos CA, US
Sisir Yalamanchili - Milpitas CA, US
International Classification:

H01L 27/146
H01L 27/148
Abstract:

An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition/growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.

Multiple Column Per Channel Ccd Sensor Architecture For Inspection And Metrology
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US Patent:

20190313044, Oct 10, 2019
Filed:

Jun 12, 2019
Appl. No.:

16/439297
Inventors:

- Milpitas CA, US
Jingjing Zhang - San Jose CA, US
Sharon Zamek - Sunnyvale CA, US
John Fielden - Los Altos CA, US
Devis Contarato - San Carlos CA, US
David L. Brown - Los Gatos CA, US
International Classification:

H04N 5/378
G01N 21/956
H04N 5/361
H04N 5/372
G06T 7/00
H01L 27/148
G01N 21/95
Abstract:

A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.

Dual-Column-Parallel Ccd Sensor And Inspection Systems Using A Sensor
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US Patent:

20190253652, Aug 15, 2019
Filed:

Apr 29, 2019
Appl. No.:

16/397072
Inventors:

- Milpitas CA, US
Jingjing Zhang - San Jose CA, US
Sharon Zamek - Sunnyvale CA, US
John Fielden - Los Altos CA, US
Devis Contarato - San Carlos CA, US
David L. Brown - Los Gatos CA, US
International Classification:

H04N 5/378
G01N 21/956
H04N 5/361
H04N 5/372
G06T 7/00
H01L 27/148
G01N 21/95
Abstract:

A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

Sensor With Electrically Controllable Aperture For Inspection And Metrology Systems
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US Patent:

20180070040, Mar 8, 2018
Filed:

Nov 8, 2017
Appl. No.:

15/806913
Inventors:

- Milpitas CA, US
John Fielden - Los Altos CA, US
David L. Brown - Los Gatos CA, US
Jingjing Zhang - San Jose CA, US
Keith Lyon - Mountain View CA, US
Mark Shi Wang - San Ramon CA, US
International Classification:

H04N 5/3722
Abstract:

Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.