Jingyi Li

US Patent:

20210384040, Dec 9, 2021

Filed:

Aug 23, 2021

Appl. No.:

17/408943

Inventors:

- Santa Clara CA, US
Jethro TANNOS - San Jose CA, US
Jingyi LI - San Jose CA, US
Zhong Qiang HUA - Saratoga CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Ellie Y. YIEH - Sunnyvale CA, US

International Classification:

H01L 21/311
H01L 21/762
H01J 37/32
H01L 21/3065
H01L 21/67
C23C 16/515
H01L 21/02
C23C 16/509
C23C 16/517
C23C 16/505

Abstract:

Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

US Patent:

20200090946, Mar 19, 2020

Filed:

Sep 17, 2018

Appl. No.:

16/132837

Inventors:

- Santa Clara CA, US
Jethro TANNOS - San Jose CA, US
Jingyi LI - San Jose CA, US
Zhong Qiang HUA - Saratoga CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Ellie Y. YIEH - Sunnyvale CA, US

International Classification:

H01L 21/311
H01L 21/762
H01L 21/67
H01L 21/3065
H01J 37/32

Abstract:

Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.