2012 to 2000 Activities Therapist/Placement Supervisor Full-timeJ.P. Gray and Associates, Inc
2005 to 2000 President and CEOJ.P. Gray and Associates, Inc
2005 to 2000 Adjunct FacultyUnited States Department of Education
2003 to 2000 Grant ReviewerPsychiatric Centered Charter, Inc./Stride, Inc Washington, DC 2006 to 2012 Activities Therapist/Program AssistantInstitute for Behavioral Change and Research Washington, DC 2002 to 2006 Pro-Social Family Therapist (Part-Time)Baltimore City Department of Social Services Baltimore, MD 2000 to 2002 Family Services Case Worker IIStevenson and Associates Columbia, MD 2000 to 2001 Psychiatric Rehabilitation Counselor (Part-Time)University of Maryland at Baltimore Center for Infant Studies Baltimore, MD 1998 to 2000 Mental Health CoordinatorAwele Treatment and Rehabilitation Services Baltimore, MD 1997 to 1998 Director of Family ServicesOakview Treatment and Rehabilitation Center Ellicott City, MD 1996 to 1997 Psychiatric Rehabilitation Counselor (Part-Time)United States Army/Reserve Fort Meade, MD 1975 to 1986 Various Positions
Education:
Coppin State College/University of Baltimore Baltimore, MD 2002 Master of Science in Human Services Administration and Drug & Alcohol CounselingCoppin State College Baltimore, MD 1996 Bachelor of Science in PsychologyAnne Arundel Community College 1994 Associate of Arts in General Studies
David Hsu - Alexandria VA, US Henry Gray - Alexandria VA, US Joan Gray - Alexandria VA, US James Gray - , US
International Classification:
H01J001/304 H01J019/24
US Classification:
313/309000
Abstract:
A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.