Joe B Campbell

US Patent:

42393370, Dec 16, 1980

Filed:

Jun 8, 1979

Appl. No.:

6/046954

Inventors:

Joe C. Campbell - Middletown NJ
Julian Stone - Rumson NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G02F 109

US Classification:

350151

Abstract:

A magneto-optic modulator of the bounce-cavity type is disclosed wherein the mirrors that are attached to the garnet crystal to provide the reflections are multilayered dielectric mirrors. By polarizing the input beam such that its E vector is perpendicular to the plane of incidence substantially total reflection is achieved from the mirrors and all of the input beam emerges from the garnet crystal. A metal film deposited on a plane of the crystal that is perpendicular to the mirrors permits the establishment of a magnetic field that is substantially parallel to the reflected beams within the crystal. When the field is established by passing current through the film, much of the light is lost during each of the reflections since substantial amounts of the polarized light having polarizations in the plane of incidence are coupled through the dielectric mirrors. Hence the intensity of the output beam is modulated by the current in the metal film.

US Patent:

42131383, Jul 15, 1980

Filed:

Dec 14, 1978

Appl. No.:

5/969346

Inventors:

Joe C. Campbell - Middletown NJ
Tien P. Lee - Holmdel NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 2714
H01L 29161

US Classification:

357 30

Abstract:

A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phoshide having unequal bandgaps and each having a pn junction are separated by a layer of (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through to the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.

US Patent:

43014631, Nov 17, 1981

Filed:

Mar 7, 1980

Appl. No.:

6/128305

Inventors:

Charles A. Burrus - Fair Haven NJ
Joe C. Campbell - Middletown NJ
Andrew G. Dentai - Highlands NJ
Tien P. Lee - Holmdel NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 2714

US Classification:

357 30

Abstract:

A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.

US Patent:

41165306, Sep 26, 1978

Filed:

Jul 29, 1976

Appl. No.:

5/709554

Inventors:

David W. Bellavance - Dallas TX
Joe C. Campbell - Highlands NJ

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G02B 514

US Classification:

350 9612

Abstract:

This disclosure concerns optical waveguides of arcuate structure fabricated by selective liquid phase epitaxy. In integrated optical circuits requiring complex processing, it will be necessary to utilize at relatively low light losses bends, curves, and dividers in the waveguide section. The arcuate optical waveguides described herein have a region of higher index of refraction surrounded by lower effective index media to confine and propagate light between active components of an integrated optical circuit. Optical waveguides extending around bends are grown by selective liquid phase epitaxy employing a horizontal graphite boat with sliding compartments, wherein multiple layers of Ga. sub. 1-x Al. sub. x As(0. ltoreq. x. ltoreq. 3) are grown. For a relatively low radius of curvature where r. sub.

US Patent:

46315667, Dec 23, 1986

Filed:

Aug 22, 1983

Appl. No.:

6/525455

Inventors:

Joe C. Campbell - Middletown NJ
Andrew G. Dentai - Atlantic Highlands NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2714
H01L 3100

US Classification:

357 30

Abstract:

High speed, high quantum efficiency, low dark current, and avalanche gain greater than 10 are exhibited by a long wavelength avalanche photodetector including in succession a terminal region of p-type indium phosphide (InP) a multiplication region comprising first and second layers of n-type indium phosphide (InP), a grading layer of n-type indium gallium arsenide phosphide (InGaAsP), and an absorption region of n-type indium gallium arsenide (InGaAs).

US Patent:

43239110, Apr 6, 1982

Filed:

Mar 7, 1980

Appl. No.:

6/127942

Inventors:

Joe C. Campbell - Middletown NJ
Tien P. Lee - Holmdel NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 2714
H01L 29161

US Classification:

357 30

Abstract:

A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a layer (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.