Joel Bruce Kimmel from 351 County View Dr, Mill Valley, CA 94941, age 80, Phone: 4153815536

Gating Device And Driver For Modulation Of Charged Particle Beams
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US Patent:

7067803, Jun 27, 2006
Filed:

Oct 9, 2003
Appl. No.:

10/683244
Inventors:

Richard N. Zare - Stanford CA, US
Facundo M. Fernandez - Atlanta GA, US
Joel R. Kimmel - Menlo Park CA, US
Oliver Trapp - Palo Alto CA, US
Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:

H01J 49/00
US Classification:

250287, 250288, 250396 R
Abstract:

By connecting the Bradbury-Nielson gate (BNG) directly to a driver without a transmission line, distortion of the voltage waveform experienced a the BNG are much reduced. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing such as 100 microns, and operating at 10 to 15 V, significantly better signal-to-noise ratios are achieved. HT-TOFMS data were also post processed using an exact knowledge of the modulation defects.

Gating Device And Driver For Modulation Of Charged Particle Beams
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US Patent:

7456391, Nov 25, 2008
Filed:

Apr 25, 2006
Appl. No.:

11/411393
Inventors:

Richard N. Zare - Stanford CA, US
Facundo M. Fernandez - Atlanta GA, US
Joel R. Kimmel - Menlo Park CA, US
Oliver Trapp - Palo Alto CA, US
Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:

B01D 59/44
US Classification:

250287, 250282, 250281
Abstract:

By connecting the Bradbury-Nielson gate (BNG) directly to a driver without a transmission line, distortion of the voltage waveform experienced a the BNG are much reduced. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing such as 100 microns, and operating at 10 to 15 V, significantly better signal-to-noise ratios are achieved. HT-TOFMS data were also post processed using an exact knowledge of the modulation defects.

Gate For Modulating Beam Of Charged Particles And Method For Making Same
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US Patent:

20030146392, Aug 7, 2003
Filed:

Aug 28, 2002
Appl. No.:

10/230606
Inventors:

Joel Kimmel - Palo Alto CA, US
Friedrich Engelke - Villingen, DE
Richard Zare - Standford CA, US
Assignee:

THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
International Classification:

H01J001/52
US Classification:

250/39600R, 250/286000, 313/348000
Abstract:

Bradbury-Nielson gates for the modulation of beams of charged particles, particularly ion beams in mass spectrometry, have been produced with an adjustable wire spacing down to 0.075 mm or a smaller spacing. The gates are robust, they can be fabricated in less than 3 hours, and the method of production is reproducible. In time-off-light mass spectrometers, fine wire spacing leads to improvements in mass resolution and modulation rates. Gates that were produced using this new method have been installed in a Hadamard transform time-of-flight mass spectrometer in order to demonstrate their utility.