Abstract:
A SRAM () includes a SRAM cell (), the cell () includes a first storage node (N), a second storage node (N), and a cross coupled latch () including a first primary source current path to the first storage node, a first primary sink current path to the first storage node, a second primary source current path to the second storage node, a second primary sink current path to the second storage node, a fifth primary current path to the first storage node, and a sixth primary current path to the second storage node. During standby and/or a read operation of the SRAM cell (), one of the fifth primary current path and the sixth primary current path is conductive. During a write operation, the fifth primary current path and the sixth primary current path are non-conductive.