John A Adamik

US Patent:

7842931, Nov 30, 2010

Filed:

Sep 25, 2008

Appl. No.:

12/238265

Inventors:

Shu Satoh - Byfield MA, US
John Adamik - Byfield MA, US
Manny Sieradzki - Georgetown MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/08

US Classification:

250423R, 25049221

Abstract:

An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.

US Patent:

RE366234, Mar 21, 2000

Filed:

Dec 2, 1996

Appl. No.:

8/752972

Inventors:

David Nin-Kou Wang - Saratoga CA
John M. White - Hayward CA
Kam S. Law - Union City CA
Cissy Leung - Fremont CA
Salvador P. Umotoy - Antioch CA
Kenneth S. Collins - San Jose CA
John A. Adamik - Byfield MA
Ilya Perlov - Santa Clara CA
Dan Maydan - Los Altos Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 124

US Classification:

427579

Abstract:

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surface.