John K Daugherty

US Patent:

6349946, Feb 26, 2002

Filed:

Sep 20, 1999

Appl. No.:

09/400342

Inventors:

John K Daugherty - Joliet IL 60435

International Classification:

F16J 1502

US Classification:

277606, 277626, 277630, 277642, 277647

Abstract:

A sealing member to seal the opening in the side wall of a chamber such as a catch basin through which a laterally extending member such as a drain pipe is positioned and connected. The sealing gasket comprises an annular ring having a cylindrical bore to receive such drain pipe for example, an annular groove cut into the annular ring which divides the portions adjacent the groove into a first annual flange on one side of the groove and a second annular flange on the opposite side of the groove. The sealing gasket is made of a flexible compressible material. It is worked into the opening to be sealed by flexing the gasket in such a way as to insert the peripheral edge of the wall surrounding the opening into the annular groove, whereupon one of the annular flanges is in sealing bearing relationship against the outer surface of the wall around the opening and the other annular flange is in sealing bearing relationship against the inner surface thereof. The drain pipe or other item is then moved into and through the cylindrical bore of the gasket in a tight fit far enough to extend a short distance into the chamber.

US Patent:

7578889, Aug 25, 2009

Filed:

Mar 30, 2007

Appl. No.:

11/730300

Inventors:

Hong Shih - Walnut CA, US
Yaobo Yin - Pleasanton CA, US
Shun Jackson Wu - Cupertino CA, US
Armen Avoyan - Glendale CA, US
John E. Daugherty - Newark CA, US
Linda Jiang - Milpitas CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B08B 3/04

US Classification:

134 26, 427488, 427489, 427490, 427491, 427523, 427524, 427525, 427526, 427527, 427528, 427529, 427530, 427531, 427533, 427534, 427535, 427536, 427537, 427538, 427539, 427562, 427563, 427564, 427569, 427570, 427571, 427572, 427573, 427574, 427575, 427576, 427577, 427578, 427579, 216 52, 216 53, 216 67, 216 83, 216 84, 216 96, 216 99, 216100, 216101, 216102, 216103, 216104, 216105, 216106, 216107, 216108, 216109, 134 1, 134 2, 134 3, 134 28, 134 34, 134 36, 134 41, 134 42, 1341041, 134150, 134166 R, 134170

Abstract:

Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

US Patent:

8097105, Jan 17, 2012

Filed:

Jan 11, 2007

Appl. No.:

11/652048

Inventors:

Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Shenjian Liu - Fremont CA, US
John Daugherty - Alameda CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C03B 29/00

US Classification:

156 8911, 156 99

Abstract:

Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150 C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.

US Patent:

8292698, Oct 23, 2012

Filed:

Mar 30, 2007

Appl. No.:

11/730299

Inventors:

Hong Shih - Walnut CA, US
Oana M. Leonte - Hayward CA, US
John E. Daugherty - Fremont CA, US
Tuochuan Huang - Saratoga CA, US
Gregory J. Goldspring - Alameda CA, US
Michael C. May - Gardiner NY, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B24B 1/00
B24C 1/00

US Classification:

451 39, 451 37, 451 57

Abstract:

An on-line method of cleaning contaminants from at least one interior surface in plasma chambers comprises blasting one or more interior surfaces of a plasma chamber with dry ice to remove contaminants from the one or more surfaces.

US Patent:

8585844, Nov 19, 2013

Filed:

Dec 13, 2011

Appl. No.:

13/324287

Inventors:

Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Shenjian Liu - Fremont CA, US
John Daugherty - Alameda CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B32B 17/00

US Classification:

156 99, 156 8911, 118723 R

Abstract:

A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.

US Patent:

8597428, Dec 3, 2013

Filed:

Dec 12, 2008

Appl. No.:

12/333819

Inventors:

Danny Brown - Brentwood CA, US
Allan Ronne - Santa Clara CA, US
Arthur Sato - San Jose CA, US
John Daugherty - Fremont CA, US
Leonard Sharpless - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
H01J 7/24
H05B 31/26
B60P 1/00
B65F 1/00
B65F 3/00

US Classification:

118715, 31511121, 31511131, 31511141, 31511151, 31511161, 31511171, 31511181, 414443, 414516, 414517

Abstract:

A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.

US Patent:

20050161061, Jul 28, 2005

Filed:

Sep 17, 2003

Appl. No.:

10/666331

Inventors:

Hong Shih - Walnut CA, US
Anthony Chen - Pleasanton CA, US
Sok Tan - Union City CA, US
Stephen Hwang - Fremont CA, US
John Daugherty - Newark CA, US
Bruno Morel - Santa Clara CA, US

International Classification:

B08B007/00

US Classification:

134026000, 134006000

Abstract:

A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.

US Patent:

20180127868, May 10, 2018

Filed:

Dec 15, 2017

Appl. No.:

15/843683

Inventors:

- Fremont CA, US
Hong SHIH - Walnut CA, US
Nash ANDERSON - Cupertino CA, US
Tom STEVENSON - Morgan Hill CA, US
John DAUGHERTY - Fremont CA, US
John Michael KERNS - Livermore CA, US
Robert Griffith O'NEILL - Hayward CA, US

International Classification:

C23C 14/56
C23C 16/455
C23C 16/44
C23C 16/04

Abstract:

A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.