Managing Partner at O'Malley, Miles, Nylen & Gilmore, P.A. - 2000-present Board Member at Washington Metropolitan Area Transit Authority - 1991-2003 Partner at O'Malley, Miles, Nylen & Gilmore, P.A. - 1991-2000 Chief Administrative Officer at Prince George's County, Maryland - 1987-1991 Deputy Chief Administrative Officer/Chief of Staff at Prince George's County, Maryland - 1982-1987 Grants Policy Specialist at U.S. Environmental Protection Agency - 1980-1982 Project Manager at Comprehensive Employment and Training Program - 1976-1980
Education:
American University, Washington College of Law Degree - JD - Juris Doctor - Law Graduated - 1987 American University Degree - MA - Masters - Public Administration Graduated - 1975 Kings College Degree - BA - Bachelor of Arts Graduated - 1974
Specialties:
Business - 25% Administrative Law - 25% State, Local And Municipal Law - 25% Government - 25%
Languages:
English
Associations:
Med-Chi Insurance Agency - Director, 2008-present Old Line Bank - Director, 2008-present Federal City Council - Executive Committee, 2005-present 7th Circuit Business/Technology Case Management Advisory Committee - Member, 2004-present The Greater Washington Board of Trade - Member, Board of Directors, 2002-present The Economic Club of Washington - Member, 1998-present Holy Redeemer Catholic Church - Finance Committee Member, 1993-present Maryland Commission to Develop a Model to Fund Higher Education - Appointed by House Speaker and Senate President, 2007-2009 Maryland Appellate Judicial Nominating Commission - Member, 2003-2007 Transportation Transition Policy Group - Member, 2006 Mt. St. Mary's College President's Council - Member, 2004-2006 Capital Classic PGA Gold Tournament - Board of Governors, 2003-2006 Rosecroft Raceway - Director, 1995-2005 Maryland Economic Development Commission - Member, 1995-1998 Prince George's Chamber of Commerce - Economic Development Committee, 1993-1998 Prince George's County Child Care Resources Corporation - Chairman, 1991-1994 Prince George's Economic Development Corporation - Member, Board of Directors, 1984-1994 Maryland Bar Foundation - Member Maryland State Bar Association - Member Prince George's County Bar Association - Member
Description:
John P. Davey is an
accomplished practitioner and business advocate who routinely advises corporate
decision makers in all aspects of their business practices....
Carefirst Bluecross and Blueshield Hospital/Medical Service Plan
840 1 St NE, Washington, DC 20065
John Davey Deputy Assistant Secretary, Office Of Disability E
United States Department of Labor Government Agency Labor · Regulation Misc Commercial Sector · Child Development Center · Regulation, Miscellaneous Commercial Sectors
200 Constitution Ave NW, Washington, DC 20210 2026936002, 2026937979
Aristos Christou - Springfield VA John E. Davey - Alexandria VA
Assignee:
The Government of the United States - Washington DC
International Classification:
H01L 2926
US Classification:
357 13
Abstract:
A TUNNETT (tunneling transit time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector.
Ohmic Contacts For Group Iii-V N-Type Semiconductors Using Epitaxial Germanium Films
John E. Davey - Alexandria VA Aristos Christou - Springfield VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2122 H01L 21225
US Classification:
29580
Abstract:
A solid-state diffusion method for providing ohmic contacts to n-type Group II-V semiconductor materials, such as gallium arsenide (GaAs). The material is successively cleaned, etched, rinsed, re-etched, rinsed and placed in an oil-free vacuum. The substrate is then heated to desorb surface oxides and an epitaxial layer of germanium and a layer of nickel, or other refractory, are deposited on the substrate at specific temperatures. Next, the structure is annealed in the vacuum at temperatures sufficient to diffuse the germanium into the GaAs material and to establish an ohmic contact.
Method For Epitaxial Growth Of Gaas Films And Devices Configuration Independent Of Gaas Substrate Utilizing Molecular Beam Epitaxy And Substrate Removal Techniques
John E. Davey - Alexandria VA Aristos Christou - Springfield VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 21203 H01L 21441
US Classification:
148175
Abstract:
A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n+ layer is grown on the n-type active material. Subsequent to growth of the semi-insulating layer, a thin cap of germanium is deposited on the composite. Gold is deposited onto the germanium cap to form an eutectic-alloy layer with the germanium. The alloy is formed and the composite is bonded to a metal, glass, or ceramic substrate and the semiconductor (germanium) is removed by etching and the n-layer is finally etched to provide a clean-up and to tailor the layer to a desired thickness. Subsequent steps are employed to form desired structures such as field-effect transistors or Schottky-barrier devices.
Ion-Implanted, Improved Ohmic Contacts For Gaas Semiconductor Devices
Aristos Christou - Springfield VA John E. Davey - Alexandria VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2348 H01L 2940 H01L 2962
US Classification:
357 65
Abstract:
A method of attaining n. sup. + regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves Ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. . sup. 29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100 A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10. sup. -6 ohm/cm. sup. 2 range.
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2980
US Classification:
357 22
Abstract:
A self-aligned GaAs FET with an active channel which is unaffected by sure charge trapping/emission. The device comprises a channel of n-doped GaAs, a source and drain regions of n. sup. + GaAs disposed at opposite ends of the channel, a semi-insulating GaAs layer disposed over the channel, with this GaAs layer having open first and second end surfaces disposed at an angle of greater than or equal to 45. degree. relative to the channel plane. A cavity is disposed in the GaAs layer exposing a portion of the channel, and a gate metallization is disposed over the GaAs layer and extending from the first end surface to the second end surface of the GaAs layer and directly contacting the exposed portion of the channel region in the cavity to form a Schottky barrier contact. This gate metallization is not disposed in contact with a significant portion of either of the first and second end surfaces. The ends of the gate metallization overhang slightly the end surfaces of the GaAs layer in order to provide masking to maintain the first and second end surfaces open during fabrication.
Aristos Christou - Springfield VA John E. Davey - Alexandria VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2948
US Classification:
357 15
Abstract:
A high-frequency (9. 3 GH. sub. z -94 GH. sub. z) gallium arsenide (GaAs) mixer iode having a low Schottky barrier height (approximately 0. 4 eV) for operating at low noise figure levels at low local oscillator power levels (0. 25 mW -0. 75 mW), includes a GaAs substrate, a thin (about 100 A) epitaxial layer of germanium on the substrate, the epitaxial germanium being deposited at a rate of about 6 A per minute and at a substrate temperature in the range of 325. degree. C. -425. degree. C. , a layer of silicon dioxide (SiO. sub. 2), the SiO. sub. 2 being etched, and layers of platinum-titanium-molybdenum-gold on the growth of epitaxial germanium. Contact areas are then plated with a layer of gold. Ohmic contact to the GaAs substrate side includes a deposition of gold-germanium alloy. Each of the layers are individually deposited at certain temperatures and thicknesses in a vacuum.
John E. Davey - Alexandria VA Aristos Christou - Springfield VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 21338
US Classification:
437184
Abstract:
A method of making a self-aligned FET includes the following steps. First, selectively doped heterostructure substrate having a predetermined crystalline structure is obtained having a heavily doped top GaAs layer, having a heavily doped AlGaAs layer under the top layer that is resistant to orientation-dependent etching, and having an undoped underlying AlGaAs layer and an undoped bottom GaAs layer. Then, an uppermost GaAs layer is deposited on the top layer. Then, an angular recess is etched through the uppermost GaAs layer and through the top heavily doped GaAs layer of the heterostructure substrate with an orientation-dependent etchant down to the etch resistant AlGaAs layer, whereby the length of the angular recess is wider at the base of the recess than at the top of the recess because of the predetermined crystalline structure and the orientation-dependent etchant. Next, a refractory metal gate of tantalum silicide is deposited in the recess. The length of the refractory metal gate is substantially the same as the length of the top of the recess and is aligned therewith.
Aristos Christou - Springfield VA John E. Davey - Alexandria VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 754 H01L 736 H01L 2348
US Classification:
148 15
Abstract:
A method of attaining n. sup. + regions with fine planar geometry in the soe and drain of GaAs devices utilizing ion implantation which improves ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. . sup. 29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10. sup. -6 ohm/cm. sup. 2 range.
Oneonta, NYMusician/Composer at Independent John Davey released his first CD as a leader, entitled "Sound Bites", in the Fall of 2005. It features ten new compositions by Davey, with pianist Jeremy Wall... John Davey released his first CD as a leader, entitled "Sound Bites", in the Fall of 2005. It features ten new compositions by Davey, with pianist Jeremy Wall, guitarist Chuck D'Aloia, percussionist Brian Melick, and vocalist Lorena Guillen. His chamber-jazz string trio From The Bridge, featuring...
Hutchinson Elementary School Detroit MI 1959-1960, St. Margaret Mary School Detroit MI 1960-1964, Fair Haven Elementary School Fair Haven MI 1964-1965, Gilbert Junior High School Algonac MI 1965-1968
The NHS points out that documents sent to pharmacists setting out the Community Pharmacy Home Delivery Service all specified the need for a Test and Trace ID number. But John Davey says he will continue his fight. "They've not questioned the fact that we did the deliveries, " he said.
Date: May 01, 2025
Category: Health
Source: Google
Youtube
John Davey, "Boreal Lullaby," // GemsOnVHS
We return to the crisp autumn shores of Marquette, Michigan. A quaint ...
Duration:
4m 33s
John Davey, "Spent" // Take Away
What started off as a typical hot southern day in Nashville quickly an...
Duration:
3m 31s
DAVEY JOHNSTONE -Rock guitarist, vocalist, mu...
Davey's heartfelt journey to success, over 40 years with Elton John & ...
Duration:
29m 25s
John Davey, "Lower Tiers," // GemsOnVHS
John Davey is a songwriter's songwriter. He writes poetry set to music...
Duration:
4m 28s
John Davey, "Left Arm," // GemsOnVHS
John Davey, in his fervent attempt to surpass Steve (of Moor Hound fam...
Duration:
4m 30s
Elton John - Davey Johnstone's 3,000th Show
Elton introduces his guitar player Davey Johnstone at his 3000th show ...