John F Fresia

US Patent:

42610958, Apr 14, 1981

Filed:

Dec 11, 1978

Appl. No.:

5/968052

Inventors:

Richard F. Dreves - Westford VT
John F. Fresia - Shelburne VT
Sang U. Kim - Essex Junction VT
John J. Lajza - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2128

US Classification:

29571

Abstract:

A method of forming a self aligned guard ring surrounding a schottky barrier diode device without requiring an enlargement of the final schottky barrier device. The method involves creating an overhanging opening in a insulator layer overlying a semiconductor body to expose the schottky contact area on the surface of the semiconductor body, depositing a diffusion barrier material such as molybdenum in the opening, the deposit being of the same size as the smallest part of the overhanging opening so that a guard ring can be formed from a vapor by diffusion around the deposited barrier material.