John M. Golio - Chandler AZ Robert C. Turner - Mesa AZ Monte G. Miller - Phoenix AZ David J. Halchin - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G06F 1700
US Classification:
364580
Abstract:
A method executed by a computer for performing numerical optimization of arbitrary functions in a computer model using parallel processors (10, 12, 14). The method initializes (20) each processor with an initial estimate of the parameter value to be optimized. The initial estimate is evaluated (22) in each processor to determine a solution. A best estimate of the parameter value from the result in each processor is selected (24), and one or more of the parallel processors with the best estimate is set to run in gradient mode while the remaining processors run in random mode (26). The estimates of the parameter value from the processors running in random mode is evaluated until a local minimum is obtained from the processor running in gradient mode (28). The process is repeated until an optimal solution is found (34).
Direct Optical Injection Locking Circuitry Utilizing Optical Oscillator Tuning
John M. Golio - Chandler AZ David A. Warren - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H03B 508 H03B 518
US Classification:
331 66
Abstract:
An optical injection locking oscillator is comtemplated having a tuning device. The tuning device generates a DC voltage proportional to the resonant frequency of a modulated light used to injection lock the free running oscillator. The DC voltage is applied to a varactor capacitor within the oscillator to bring the frequency of oscillation within a close proximity to the modulating frequency of the light. This facilitates injection locking, whereas frequencies of oscillation outside a certain locking range will not facilitate injection locking. The modulated light then locks the oscillator into a desired resonant frequency. A second embodiment contemplates using a YIG oscillator regulated by a DC current generated within the tuning device.
Attenuator Circuit Operating With Single Point Control
Joseph Staudinger - Gilbert AZ John M. Golio - Chandler AZ William B. Beckwith - Chandler AZ Jean B. Verdier - Tournefeuille, FR
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H03H 1100
US Classification:
307552
Abstract:
An attenuator circuit uses single point control to adjust the attenuation levels between first and second nodes. The attenuator is set-up as a. pi. -network with a pass transistor and first and second shunt transistors. Capacitors are coupled in the drain and source conduction paths of the first and second shunt transistors for DC isolation to float the shunt transistors. A control voltage applied at the drain of the pass transistor and the gates of the first and second shunt transistors controls the attenuation level. A parallel resistor and capacitor combination at the drain of the first shunt transistor provides tuning to match the input impedance of the attenuator to the sourcing circuit.
Field Effect Attenuator Devices Having Controlled Electrical Lengths
William B. Beckwith - Chandler AZ John M. Golio - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 29480 H01L 29560 H01L 29640
US Classification:
357 15
Abstract:
Overlapping gate electrodes are selectively energized to vary the electrical length and thus the resistance of the conductive path through a field effect attenuator. The electrical width can also be varied to provide additional control over the resistance.
Warren L. Seely - Chandler AZ Joseph Staudinger - Gilbert AZ John M. Golio - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H04B 126
US Classification:
455326
Abstract:
A mixer separates IF components IF1, IF2 of the same frequency which are images of different frequency RF signals RF1, RF2 beating with a given LO signal. The LO signal is applied to a FET active power divider and applied to the drains of a pair of balanced FET mixing elements. The FETs for the active power divider are built from the same device structure as the FETs for the mixing elements sharing drain nodes. The RF signals are passed through a quadrature phase shifter and applied to the gates of the FET mixing elements. The mixed signals appear at the drains of FET mixing elements are applied to opposing ports of a second quadrature hybrid at whose output ports the separated IF output signals IF1, IF2 appear.
John M. Golio - Chandler AZ Ronald J. Massey - Mesa AZ Monte G. Miller - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2992
US Classification:
257601
Abstract:
A variable field effect capacitive device suitable for providing different amounts of capacitance in response to control signals of different magnitudes. The device includes a pair of plate electrodes and a pair of control electrodes. A semiconductor region is located between the control electrodes. The plates each make Schottky contact to the semiconductor region to form a depletion region therein which changes shape in response to changes in the magnitude of the control signals.
Digital-To-Analog Converting Field Effect Device And Circuitry
John M. Golio - Chandler AZ Joseph Staudinger - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2980 H01L 2978 H03K 301
US Classification:
357 22
Abstract:
A field effect device and circuit suitable for providing an analog output signal having a magnitude which is representative of a digital input code having a sequence of bits. The device includes a plurality of gate electrodes located between an input electrode and an output electrode. The gate electrodes have unequal lengths to provide different gate widths each representative of the magnitude of a portion of an analog signal provided at the output electrode in response to a digital signal of a particular logic state, such as a logical "one", when applied to any one of the gate electrodes. Thus, the magnitude of the current conducted between the input electrode and the output electrode is responsive to the sum of the widths of the gates receiving the digital signal of a particular logic state.
Method For Fabricating An Elevated-Gate Field Effect Transistor
James G. Gilbert - Tempe AZ Lawrence S. Klingbeil - Chandler AZ David J. Halchin - Chandler AZ John M. Golio - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 218252
US Classification:
438174
Abstract:
A field effect transistor (10) has an active layer (16) formed in a substrate (12). A gate (20) is disposed on an elevated platform (18) formed from the active layer (16). The elevated platform (18) raises the bottom surface (21) of the gate (20) relative to the top surface (34, 36) of the active region (13) on either side of the gate (20). A fabrication method for the transistor (10) forms the elevated platform (18) by etching the active region surface (44) on both sides of the gate (20) so that the bottom surface (21) of the gate (20) is elevated relative to the top surface (34) of the surrounding active region (13). The gate (20) itself and/or a patterned photoresist layer (116) may be used as a mask for performing this etch.
Name / Title
Company / Classification
Phones & Addresses
John V Golio Other officer
PEOPLE'S UNITED EQUIPMENT FINANCE CORP
Suite 130 SUITE 1300, Houston, TX 77056 2338 W Royal Palm Rd STE -J, Phoenix, AZ 85021 300 Frank W Burr Blvd, Teaneck, NJ 07666
Isbn (Books And Publications)
Commercial Wireless Circuits and Components Handbook