John Michael Golio

age ~70

from Mesa, AZ

Also known as:
  • John M Golio
  • Janet Ruth Golio
  • Janet R Golio
  • Janet M Golio
  • Jmichael Golio
  • Janette R Golio
  • Mike Golio
  • Michael Golio
  • John Gregori
Phone and address:
2458 E Kael Cir, Mesa, AZ 85213
4806156990

John Golio Phones & Addresses

  • 2458 E Kael Cir, Mesa, AZ 85213 • 4806156990
  • 2458 Kael St, Mesa, AZ 85213 • 4806156990
  • 7611 36Th St, Phoenix, AZ 85042 • 6025953803
  • 3097 Roberts Ferry Rd, Solon, IA 52333 • 3198487412
  • Chandler, AZ
  • Tempe, AZ
  • Maricopa, AZ
  • 2458 E Kael Cir, Mesa, AZ 85213 • 4805401075

Work

  • Position:
    Executive, Administrative, and Managerial Occupations

Education

  • Degree:
    High school graduate or higher

Us Patents

  • Optimization Method Using Parallel Processors

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  • US Patent:
    55900631, Dec 31, 1996
  • Filed:
    Jul 5, 1994
  • Appl. No.:
    8/270948
  • Inventors:
    John M. Golio - Chandler AZ
    Robert C. Turner - Mesa AZ
    Monte G. Miller - Phoenix AZ
    David J. Halchin - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    G06F 1700
  • US Classification:
    364580
  • Abstract:
    A method executed by a computer for performing numerical optimization of arbitrary functions in a computer model using parallel processors (10, 12, 14). The method initializes (20) each processor with an initial estimate of the parameter value to be optimized. The initial estimate is evaluated (22) in each processor to determine a solution. A best estimate of the parameter value from the result in each processor is selected (24), and one or more of the parallel processors with the best estimate is set to run in gradient mode while the remaining processors run in random mode (26). The estimates of the parameter value from the processors running in random mode is evaluated until a local minimum is obtained from the processor running in gradient mode (28). The process is repeated until an optimal solution is found (34).
  • Direct Optical Injection Locking Circuitry Utilizing Optical Oscillator Tuning

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  • US Patent:
    48497169, Jul 18, 1989
  • Filed:
    Aug 15, 1988
  • Appl. No.:
    7/231922
  • Inventors:
    John M. Golio - Chandler AZ
    David A. Warren - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H03B 508
    H03B 518
  • US Classification:
    331 66
  • Abstract:
    An optical injection locking oscillator is comtemplated having a tuning device. The tuning device generates a DC voltage proportional to the resonant frequency of a modulated light used to injection lock the free running oscillator. The DC voltage is applied to a varactor capacitor within the oscillator to bring the frequency of oscillation within a close proximity to the modulating frequency of the light. This facilitates injection locking, whereas frequencies of oscillation outside a certain locking range will not facilitate injection locking. The modulated light then locks the oscillator into a desired resonant frequency. A second embodiment contemplates using a YIG oscillator regulated by a DC current generated within the tuning device.
  • Attenuator Circuit Operating With Single Point Control

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  • US Patent:
    53451236, Sep 6, 1994
  • Filed:
    Jul 7, 1993
  • Appl. No.:
    8/087245
  • Inventors:
    Joseph Staudinger - Gilbert AZ
    John M. Golio - Chandler AZ
    William B. Beckwith - Chandler AZ
    Jean B. Verdier - Tournefeuille, FR
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H03H 1100
  • US Classification:
    307552
  • Abstract:
    An attenuator circuit uses single point control to adjust the attenuation levels between first and second nodes. The attenuator is set-up as a. pi. -network with a pass transistor and first and second shunt transistors. Capacitors are coupled in the drain and source conduction paths of the first and second shunt transistors for DC isolation to float the shunt transistors. A control voltage applied at the drain of the pass transistor and the gates of the first and second shunt transistors controls the attenuation level. A parallel resistor and capacitor combination at the drain of the first shunt transistor provides tuning to match the input impedance of the attenuator to the sourcing circuit.
  • Field Effect Attenuator Devices Having Controlled Electrical Lengths

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  • US Patent:
    49981471, Mar 5, 1991
  • Filed:
    Jul 31, 1989
  • Appl. No.:
    7/387050
  • Inventors:
    William B. Beckwith - Chandler AZ
    John M. Golio - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 29480
    H01L 29560
    H01L 29640
  • US Classification:
    357 15
  • Abstract:
    Overlapping gate electrodes are selectively energized to vary the electrical length and thus the resistance of the conductive path through a field effect attenuator. The electrical width can also be varied to provide additional control over the resistance.
  • Active Image Separation Mixer

    view source
  • US Patent:
    54107431, Apr 25, 1995
  • Filed:
    Jun 14, 1993
  • Appl. No.:
    8/075621
  • Inventors:
    Warren L. Seely - Chandler AZ
    Joseph Staudinger - Gilbert AZ
    John M. Golio - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H04B 126
  • US Classification:
    455326
  • Abstract:
    A mixer separates IF components IF1, IF2 of the same frequency which are images of different frequency RF signals RF1, RF2 beating with a given LO signal. The LO signal is applied to a FET active power divider and applied to the drains of a pair of balanced FET mixing elements. The FETs for the active power divider are built from the same device structure as the FETs for the mixing elements sharing drain nodes. The RF signals are passed through a quadrature phase shifter and applied to the gates of the FET mixing elements. The mixed signals appear at the drains of FET mixing elements are applied to opposing ports of a second quadrature hybrid at whose output ports the separated IF output signals IF1, IF2 appear.
  • Tunable Capacitor With Rf-Dc Isolation

    view source
  • US Patent:
    52201945, Jun 15, 1993
  • Filed:
    May 4, 1991
  • Appl. No.:
    7/697506
  • Inventors:
    John M. Golio - Chandler AZ
    Ronald J. Massey - Mesa AZ
    Monte G. Miller - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 2992
  • US Classification:
    257601
  • Abstract:
    A variable field effect capacitive device suitable for providing different amounts of capacitance in response to control signals of different magnitudes. The device includes a pair of plate electrodes and a pair of control electrodes. A semiconductor region is located between the control electrodes. The plates each make Schottky contact to the semiconductor region to form a depletion region therein which changes shape in response to changes in the magnitude of the control signals.
  • Digital-To-Analog Converting Field Effect Device And Circuitry

    view source
  • US Patent:
    50050591, Apr 2, 1991
  • Filed:
    May 1, 1989
  • Appl. No.:
    7/345746
  • Inventors:
    John M. Golio - Chandler AZ
    Joseph Staudinger - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 2980
    H01L 2978
    H03K 301
  • US Classification:
    357 22
  • Abstract:
    A field effect device and circuit suitable for providing an analog output signal having a magnitude which is representative of a digital input code having a sequence of bits. The device includes a plurality of gate electrodes located between an input electrode and an output electrode. The gate electrodes have unequal lengths to provide different gate widths each representative of the magnitude of a portion of an analog signal provided at the output electrode in response to a digital signal of a particular logic state, such as a logical "one", when applied to any one of the gate electrodes. Thus, the magnitude of the current conducted between the input electrode and the output electrode is responsive to the sum of the widths of the gates receiving the digital signal of a particular logic state.
  • Method For Fabricating An Elevated-Gate Field Effect Transistor

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  • US Patent:
    56311753, May 20, 1997
  • Filed:
    Jan 17, 1996
  • Appl. No.:
    8/587434
  • Inventors:
    James G. Gilbert - Tempe AZ
    Lawrence S. Klingbeil - Chandler AZ
    David J. Halchin - Chandler AZ
    John M. Golio - Chandler AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 218252
  • US Classification:
    438174
  • Abstract:
    A field effect transistor (10) has an active layer (16) formed in a substrate (12). A gate (20) is disposed on an elevated platform (18) formed from the active layer (16). The elevated platform (18) raises the bottom surface (21) of the gate (20) relative to the top surface (34, 36) of the active region (13) on either side of the gate (20). A fabrication method for the transistor (10) forms the elevated platform (18) by etching the active region surface (44) on both sides of the gate (20) so that the bottom surface (21) of the gate (20) is elevated relative to the top surface (34) of the surrounding active region (13). The gate (20) itself and/or a patterned photoresist layer (116) may be used as a mask for performing this etch.
Name / Title
Company / Classification
Phones & Addresses
John V Golio
Other officer
PEOPLE'S UNITED EQUIPMENT FINANCE CORP
Suite 130 SUITE 1300, Houston, TX 77056
2338 W Royal Palm Rd STE -J, Phoenix, AZ 85021
300 Frank W Burr Blvd, Teaneck, NJ 07666

Isbn (Books And Publications)

Commercial Wireless Circuits and Components Handbook

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Author
John Michael Golio

ISBN #
0849315646

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