John K Labarre

US Patent:

6410974, Jun 25, 2002

Filed:

Mar 5, 2001

Appl. No.:

09/800049

Inventors:

Jerome Tsu-Rong Chu - Orlando FL
John D. LaBarre - Walnutport PA
Wen Lin - Allentown PA
Blair Miller - New Ringgold PA

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01L 2976

US Classification:

257531, 257328, 438369

Abstract:

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably includes forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

US Patent:

54258464, Jun 20, 1995

Filed:

Aug 9, 1993

Appl. No.:

8/103726

Inventors:

Jeffrey T. Koze - Emmaus PA
Drew J. Kuhn - Whitehall PA
John D. LaBarre - Walnutport PA

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

B44C 122

US Classification:

1566461

Abstract:

Perimeter material is removed from substrates by stacking the substrates and subjecting them to a plasma etch. In an exemplary application, the perimeter of a silicon wafer dielectric cap (typically silicon nitride) is removed by stacking the wafers in intimate contact, and etching the wafers in a barrel etcher. A well-controlled removal of the cap perimeter is obtained, allowing for a smooth epitaxial deposition at the water edge in a subsequent operation. An additional benefit is smoothing of the substrate edge contour, which reduces scratching of wafer cassettes and other handling equipment.

US Patent:

62251821, May 1, 2001

Filed:

Aug 30, 1999

Appl. No.:

9/386132

Inventors:

Jerome Tsu-Rong Chu - Orlando FL
John D. LaBarre - Walnutport PA
Wen Lin - Allentown PA
Blair Miller - New Ringgold PA

Assignee:

Agere Systems Guardian Corp. - Miami Lakes FL

International Classification:

H01L 21331

US Classification:

438369

Abstract:

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.