John J Lambe

US Patent:

43587437, Nov 9, 1982

Filed:

Jul 9, 1980

Appl. No.:

6/167174

Inventors:

John J. Lambe - Birmingham MI
Shaun L. McCarthy - Ann Arbor MI
Henry L. Stadler - Washington DC

Assignee:

Ford Motor Company - Dearborn MI

International Classification:

G09F 930

US Classification:

332 751

Abstract:

A light modulator utilizing the principal of ion injection from a switching electrode into a fluid dielectric to effect turbulent forces and the resultant movement of a light interrupting object into and out of a light path. The fluid dielectric and the movable object have similar values of specific gravity.

US Patent:

41643747, Aug 14, 1979

Filed:

Sep 30, 1977

Appl. No.:

5/838338

Inventors:

John J. Lambe - Birmingham MI
Shaun L. McCarthy - Ann Arbor MI

Assignee:

Ford Motor Company - Dearborn MI

International Classification:

G01J 310
G01J 312

US Classification:

356402

Abstract:

A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff. nu. sub. co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened. One of the uses for the solid state source is as a light source of a spectrophotometer where the transmittance or reflectance band characteristics of a sample are determined by converting the photodetector current to its second derivative and correlating the second derivative with the applied voltage which is modulated over a predetermined range of amplitude values.

US Patent:

43731457, Feb 8, 1983

Filed:

Mar 12, 1981

Appl. No.:

6/242966

Inventors:

Shaun L. McCarthy - Ann Arbor MI
John J. Lambe - Birmingham MI

Assignee:

Ford Motor Company - Dearborn MI

International Classification:

H01J 163
H01J 170

US Classification:

313503

Abstract:

A thin film electroluminescent device constructed on a smooth surface substrate on which a base conductive layer is formed, followed in sequence by an impurity doped barrier layer, an electrically resistive layer and a counterelectrode layer. The impurity doped barrier layer is doped with a material which exhibits electroluminescence. The impurity doped barrier layer is produced in a controlled oxidation process of the base conductive layer which is alloyed to a minor extent with the impurity material.

US Patent:

48766682, Oct 24, 1989

Filed:

Apr 29, 1986

Appl. No.:

6/857076

Inventors:

Anilkumar P. Thakoor - Pasadena CA
John Lambe - Altadena CA
Alexander Moopen - Pasadena CA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

G11C 1300

US Classification:

365163

Abstract:

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

US Patent:

49690213, Nov 6, 1990

Filed:

Jun 12, 1989

Appl. No.:

7/364114

Inventors:

Anilkumar P. Thakoor - Pasadena CA
Alexander W. Moopenn - Pasadena CA
John J. Lambe - Redmond WA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 2978

US Classification:

357 235

Abstract:

An electrically programmable, erasable, read-only memory is comprised of an array of vertical porous floating gate MOSFET structures in a layer of a-Si with parallel X and parallel Y conductors on opposite sides of the a-Si layer functioning as source and drain electrodes. The floating gate of each vertical MOSFET structure consists of a plurality of electrically insulated metallic particles embedded in the a-Si layer between said source and said drain electrodes with the metallic particles adjacent to the source electrodes. The insulation between the metallic particles and the a-Si material is thick enough to prevent tunneling of electrons but the insulation between the particles and the source electrode is thinner to allow tunneling of electrons at a predetermined threshold voltage to store a charge in the porous floating gate. Alternatively, the metal particles may be gathered into one insulated toroidal gate which controls current through a-Si in the center of the toroidal gate. Analog or binary information may be stored in the vertical MOSFET structures by application of high voltage.

US Patent:

47288515, Mar 1, 1988

Filed:

Jan 8, 1982

Appl. No.:

6/338463

Inventors:

John J. Lambe - Altadena CA

Assignee:

Ford Motor Company - Dearborn MI

International Classification:

H01J 102

US Classification:

313309

Abstract:

A field emitter device utilizing a gate electrode adjacent a carbon fiber electron emitter cathode for controlling the initial flow of electrons between the cathode and a collector element. Subsequent disconnect of the gate electrode from its power source does not affect the electron flow and thereby provides a bistable memory type device. Luminescent material on the collector provides a light emission display at points corresponding to electron flow between the emitter and the collector.

US Patent:

41639200, Aug 7, 1979

Filed:

Sep 26, 1977

Appl. No.:

5/836624

Inventors:

John J. Lambe - Birmingham MI
Shaun L. McCarthy - Ann Arbor MI

Assignee:

Ford Motor Company - Dearborn MI

International Classification:

H05B 3302
H01L 3300

US Classification:

313503

Abstract:

A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff. nu. sub. co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened.

US Patent:

49317636, Jun 5, 1990

Filed:

Feb 16, 1988

Appl. No.:

7/157318

Inventors:

Anilkumar P. Thakoor - Pasadena CA
John J. Lambe - Redmond WA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01C 710
H01C 1012

US Classification:

338 22SD

Abstract:

MnO. sub. 2-x thin films (12) exhibit irreversible memory switching (28) with an "OFF/ON" resistance ratio of at least about 10. sup. 3 and the tailorability of "ON" state (20) resistance. Such films are potentially extremely useful as a "connection" element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or "disconnected" as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO. sub. 2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.