John A Macaulay

age ~64

from Pollock Pines, CA

Also known as:
  • Jahn Macaulay
  • John Mac Aulay
  • John Macauley

John Macaulay Phones & Addresses

  • Pollock Pines, CA
  • San Ramon, CA
  • Alamo, CA
  • Concord, CA
  • San Jose, CA
  • Livermore, CA
  • San Carlos, CA
  • San Francisco, CA
  • 91 E Tasman Dr, San Jose, CA 95134

Work

  • Company:
    Ss8 networks inc
  • Address:
    91 E Tasman Dr, San Jose, CA 95134
  • Phones:
    4089440250
  • Position:
    Professional engineer
  • Industries:
    Telephone and Telegraph Apparatus

Ranks

  • Licence:
    Connecticut - Active
  • Date:
    1989

Lawyers & Attorneys

John Macaulay Photo 1

John Bradford Macaulay - Lawyer

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Licenses:
Connecticut - Active 1989
John Macaulay Photo 2

John Macaulay - Lawyer

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ISLN:
905288541
Admitted:
1989
University:
Middlebury College, M.A., 1983; New College, B.A., 1981
Law School:
University of Notre Dame, J.D., 1989
John Macaulay Photo 3

John Macaulay - Lawyer

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ISLN:
901591737
Admitted:
1973

Wikipedia

John MacAulay

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John Alexander MacAulay, CC (1895 June 11, 1978) was a Canadian lawyer, businessman, and a volunteer worker in the Canadian Red Cross Society. ...

John Macaulay (politician)

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John Macaulay (October 17, 1792 August 10, 1857) was a businessman ...

Name / Title
Company / Classification
Phones & Addresses
John Macaulay
Professional Engineer
SS8 Networks Inc
Telephone and Telegraph Apparatus
91 E Tasman Dr, San Jose, CA 95134
John Macaulay
Professional Engineer
SS8 NETWORKS, INC
Communication Services · Telephone Apparatus Manufacturing
91 E Tasman Dr, San Jose, CA 95134
4089440250, 4089539299, 4084283867, 4084283678

Resumes

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John Macaulay

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John Macaulay Photo 5

John Macaulay

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Isbn (Books And Publications)

Source Book on British Isles Geography

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Author
John Macaulay

ISBN #
0456017607

Alcoholism

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Author
John Macaulay

ISBN #
0737724722

Alcoholism

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Author
John Macaulay

ISBN #
0737724730

License Records

John C. Macaulay

Phone:
9193834075 (Work)
License #:
28159 - Expired
Category:
Pediatrics
Type:
Locum Tenens

Us Patents

  • Gated Filament Structures For A Field Emission Display

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  • US Patent:
    6515407, Feb 4, 2003
  • Filed:
    Aug 28, 1998
  • Appl. No.:
    09/141697
  • Inventors:
    John M. Macaulay - Palo Alto CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 102
  • US Classification:
    313309, 313336, 313351
  • Abstract:
    A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness âsâ and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width ârâ along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis.
  • Method For Creating Gated Filament Structures For Field Emission Displays

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  • US Patent:
    7025892, Apr 11, 2006
  • Filed:
    Jan 31, 1995
  • Appl. No.:
    08/383409
  • Inventors:
    David L. Bergeron - San Jose CA, US
    John M. Macaulay - Palo Alto CA, US
    Roger W. Barton - Palo Alto CA, US
    Jeffrey D. Morse - Martinez CA, US
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01B 13/00
    C23F 1/00
  • US Classification:
    216 13, 216 16, 216 19, 216 49, 445 49, 445 50
  • Abstract:
    A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer and a metal gate layer positioned on at least a portion of a top surface of the insulating layer. A plurality of patterned gates are also provided in order to define a plurality of gate apertures on the top surface of the insulating layer. A plurality of spacers are formed in the gate apertures at edges of the patterned gates on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and forming a plurality of pores in the insulating layer. The pores are plated with a filament material that extends from the insulating pores, into the gate apertures, and creates a plurality of filaments. The spacers are then removed. The multi-layer structure can further include a conductivity layer on at least a portion of a top surface of the substrate.
  • Electrochemical Removal Of Material, Particularly Excess Emitter Material In Electron-Emitting Device

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  • US Patent:
    57664463, Jun 16, 1998
  • Filed:
    Mar 5, 1996
  • Appl. No.:
    8/610729
  • Inventors:
    Christopher J. Spindt - Menlo Park CA
    Gabriela S. Chakarova - San Jose CA
    Maria S. Nikolova - Baltimore MD
    Peter C. Searson - Baltimore MD
    Duane A. Haven - Cupertino CA
    Nils Johan Knall - Palo Alto CA
    John M. Macaulay - Palo Alto CA
    Roger W. Barton - Palo Alto CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    C25F 300
  • US Classification:
    205640
  • Abstract:
    An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
  • Field Emission Cathode Array Coated With Electron Work Function Reducing Material, And Method

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  • US Patent:
    50892924, Feb 18, 1992
  • Filed:
    Jul 20, 1990
  • Appl. No.:
    7/556647
  • Inventors:
    John M. MaCaulay - Menlo Park CA
    C. A. Spindt - Menlo Park CA
    Christopher E. Holland - Redwood City CA
    Ivor Brodie - Palo Alto CA
  • Assignee:
    Coloray Display Corporation - Fremont CA
  • International Classification:
    B05D 512
    H01J 1906
  • US Classification:
    427 78
  • Abstract:
    A field emission cathode device is disclosed herein and includes an array of electron emitting cathode tips supported by a base electrode or electrodes, a gate electrode spaced from and associated with each tip, and dielectric material located between each gate electrode and the base electrode of its associated cathode tip for insulating the two from one another. The device also includes means for establishing an electric field between the gate electrodes and tips sufficient to cause the tips to emit current. In addition, each electron emitting cathode tip is coated with an electrically conductive material that reduces its electron work function. At the same time, the dielectric material which insulates the base electrodes and gate electrodes from one another is maintained sufficiently free of the electron work function reducing material so as not to result in any appreciable current leakage between the base and gate electrodes. The specific method of coating the cathode tips is also disclosed herein.
  • Structure And Fabrication Of Gated Electron-Emitting Device Having Electron Optics To Reduce Electron-Beam Divergence

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  • US Patent:
    55526594, Sep 3, 1996
  • Filed:
    Jun 29, 1994
  • Appl. No.:
    8/269312
  • Inventors:
    John M. Macaulay - Palo Alto CA
    Christopher J. Spindt - Menlo Park CA
    Patrick A. Corcoran - Oakland CA
    Lee H. Veneklasen - Castro Valley CA
  • Assignee:
    Silicon Video Corporation - San Jose CA
  • International Classification:
    H01J 102
  • US Classification:
    313310
  • Abstract:
    An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.
  • Field-Emission Device That Utilizes Filamentary Electron-Emissive Elements And Typically Has Self-Aligned Gate

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  • US Patent:
    58516697, Dec 22, 1998
  • Filed:
    May 22, 1995
  • Appl. No.:
    8/446392
  • Inventors:
    John M. Macaulay - Palo Alto CA
    Peter C. Searson - Baltimore MD
    Robert M. Duboc - Menlo Park CA
    Christopher J. Spindt - Menlo Park CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    D02C 300
  • US Classification:
    428401
  • Abstract:
    A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.
  • Fabrication Of Gated Electron-Emitting Device Utilizing Distributed Particles To Define Gate Openings And Utilizing Spacer Material To Control Spacing Between Gate Layer And Electron-Emissive Elements

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  • US Patent:
    58656596, Feb 2, 1999
  • Filed:
    Jun 7, 1996
  • Appl. No.:
    8/660538
  • Inventors:
    Paul N. Ludwig - Livermore CA
    Duane A. Haven - Cupertino CA
    John M. Macaulay - Palo Alto CA
    Christopher J. Spindt - Menlo Park CA
    James M. Cleeves - Redwood City CA
    N. Johan Knall - Palo Alto CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 902
    H01J 130
  • US Classification:
    445 50
  • Abstract:
    A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (110A, 124A, 140, or 150B) but leave corresponding apertures (112A, 126A, 142, or 152) through the spacer material. The insulating layer is etched through the apertures to form dielectric openings (114, 128, 144, or 154) through the insulating layer. Emitter material is introduced into the dielectric openings to form electron-emissive elements (116B, 130A, 146A, or 156B) typically filamentary in shape.
  • Formation Of Layer Having Openings Produced By Utilizing Particles Deposited Under Influence Of Electric Field

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  • US Patent:
    57559449, May 26, 1998
  • Filed:
    Jun 7, 1996
  • Appl. No.:
    8/660535
  • Inventors:
    Duane A. Haven - Cupertino CA
    Esther Sluzky - San Diego CA
    John M. Macaulay - Palo Alto CA
  • Assignee:
    Candescent Technologies Corporation - San Jose
  • International Classification:
    C23D 1302
  • US Classification:
    204486
  • Abstract:
    A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (E. sub. A) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.

Facebook

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John Macaulay

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John Macaulay Photo 7

John Macaulay Jr.

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John Macaulay Photo 8

Michael John Macaulay

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John Macaulay Photo 9

Macaulay John

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John Macaulay Photo 10

John Murdo MacAulay

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John Macaulay Photo 11

John Macaulay Sr.

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John Macaulay Photo 12

Macaulay John

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John Macaulay Photo 13

John Edward Macaulay

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Plaxo

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John MacAulay

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John Macaulay

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Remuera, Auckland, NEW ZEALAND
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John Macaulay

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Verizon

Classmates

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John MacAulay

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Schools:
Suffern High School Suffern NY 1978-1982
Community:
Rosemary Jones, Peter Labita, Warren Hoehn
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John MacAulay

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Schools:
Breton Education Center New Waterford Swaziland 1982-1986
Community:
Joe Snow, Wilson Rudderham, Kendra Burton, Barbara Mulligan
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John MacAulay

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Schools:
Malcolm Shabazz City High School Madison WI 1977-1981
Community:
Tina Schumann, Grog Gregg, Debbie Shortt, Pam Elliott, Shalako Kloppenburg
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John MacAulay

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Schools:
Fargo Central High School Fargo ND 1957-1961
Community:
Terrie Toutant
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John MacAulay

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Schools:
Austin O'Brien High School Edmonton Azores 1984-1988
Community:
Michael Fotty, Jean Donovan, Jamie Amos
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John MacAulay

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Schools:
Vanier High School Courtenay Saudi Arabia 1976-1980
Community:
Ria Jacobson, Diane Hillis, Pattee Aubut, Jamie Amos
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John MacAulay

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Schools:
Barker High School Barker NY 1981-1985
Community:
Teresa Stoddard, Gale Ribbeck, Todd Strong, Thomas Stalker, Paul Wronski, Thomas Reynolds, Kevin Smith, Tracy Simpson, Cindy Parish, Angela Klee, Michelle Huntington
John Macaulay Photo 24

Fargo Central High School...

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Graduates:
John MacAulay (1957-1961),
Marlene Kay Sullivan (1960-1962),
Kathleen Johnson (1959-1963),
Marilyn Estenson (1952-1956)

Myspace

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John Macaulay

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Locality:
JOPLIN, Missouri
Gender:
Male
Birthday:
1934
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John Macaulay

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Locality:
Chambersburg, Pennsylvania
Gender:
Male
Birthday:
1948

Youtube

Jon MacAulay-The River (live on Stop!TV)

Jon MacAulay's performs Dave Lapp's "The River" live @ Thtre Lac-Brome...

  • Duration:
    2m 40s

Nirvana Reunion - In Bloom at Cal Jam 18 with...

Nirvana Reunion at Cal Jam 18 on 10-6-18 with John McCauley on vocals ...

  • Duration:
    4m 53s

John McCauley of Deer Tick - Dead Flowers (R...

ROLLO & GRADY SESSIONS John McCauley of Deer Tick performing Dead Flow...

  • Duration:
    4m 54s

John McCauley of Deer Tick - We Belong Togeth...

ROLLO & GRADY SESSIONS John McCauley of Deer Tick performing We Belong...

  • Duration:
    2m 37s

Goodnight Irene | John McCauley

  • Duration:
    5m 22s

Jon MacAulay-Solid Ground

Live at the Piggery Theatre in North Hatley (August 2016) Jon MacAulay...

  • Duration:
    3m 35s

Googleplus

John Macaulay Photo 27

John Macaulay

About:
I am me, no one else is.
Bragging Rights:
Host of Dayton Rocky Horror Picture Show 96-99, Editor In Chief - The Broadside 2007, Host of a number of poetry reads and writers groups, Social Networking Admin for Combine Communications
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John Macaulay

Tagline:
Bikes and shit!
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John Macaulay

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John Macaulay

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John Macaulay

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John Macaulay

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John Macaulay

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John Macaulay


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