John David Mccarty

US Patent:

8498469, Jul 30, 2013

Filed:

Mar 1, 2010

Appl. No.:

12/715351

Inventors:

Guangming Xiao - Austin TX, US
Thomas C. Cecil - Menlo Park CA, US
Linyong Pang - Los Gatos CA, US
Robert E. Gleason - San Carlos CA, US
John F. McCarty - Redwood City CA, US

Assignee:

Synopsys, Inc. - Mountain View CA

International Classification:

G06K 9/00

US Classification:

382144, 355 67, 355 53, 355 55, 355 77

Abstract:

A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.