John Luke Peck

US Patent:

7524765, Apr 28, 2009

Filed:

Nov 2, 2005

Appl. No.:

11/266131

Inventors:

Juan E. Dominquez - Hillsboro OR, US
Adrien R. Lavoie - Beaverton OR, US
Harsono S. Simka - Saratoga CA, US
John Plombon - Portland OR, US
David M. Thompson - East Amherst NY, US
John D. Peck - West Seneca NY, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21/44

US Classification:

438681, 257E21171

Abstract:

A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.

US Patent:

7550385, Jun 23, 2009

Filed:

Sep 30, 2005

Appl. No.:

11/240005

Inventors:

Adrien R. Lavoie - St. Helens OR, US
Valery M. Dubin - Portland OR, US
Juan E. Dominguez - Hillsboro OR, US
Kevin P. O'Brien - Portland OR, US
Steven W. Johnston - Portland OR, US
John D. Peck - West Seneca NY, US
David M. Thompson - East Amherst NY, US
David W. Peters - Tonawanda NY, US

Assignee:

Intel Corporation - Santaclara CA

International Classification:

H01L 21/44

US Classification:

438681, 438627, 438648, 438656, 257E21168, 42724917

Abstract:

A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

US Patent:

7851360, Dec 14, 2010

Filed:

Feb 14, 2007

Appl. No.:

11/675066

Inventors:

Juan Dominguez - Hillsboro OR, US
Adrien Lavoie - Beaverton OR, US
John Plombon - Portland OR, US
Joseph Han - San Jose CA, US
Harsono Simka - Saratoga CA, US
David Thompson - Tonawanda NY, US
John Peck - Tonawanda NY, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21/44

US Classification:

438681, 438648, 438650, 438653, 438654, 257E21171, 257E21476

Abstract:

Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.