John Q Pham

US Patent:

7061022, Jun 13, 2006

Filed:

Aug 24, 2004

Appl. No.:

10/927653

Inventors:

John T. Pham - Fairfax VA, US
John D. Bruno - Bowie MD, US
Richard L. Tober - Elkridge MD, US

Assignee:

United States of America as Represented by the Secretary of the Army - Washington DC

International Classification:

H01L 27/15
H01L 23/34

US Classification:

257 79, 257623, 257713, 257717

Abstract:

Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

US Patent:

7271019, Sep 18, 2007

Filed:

Jun 9, 2006

Appl. No.:

11/452566

Inventors:

John T. Pham - Fairfax VA, US
John D. Bruno - Bowie MD, US
Richard L. Tober - Elkridge MD, US

Assignee:

United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 21/00

US Classification:

438 22, 438 31, 438 39, 257E21366

Abstract:

Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

US Patent:

20020131463, Sep 19, 2002

Filed:

Mar 14, 2001

Appl. No.:

09/805724

Inventors:

John Bruno - Bowie MD, US
John Pham - Fairfax VA, US

International Classification:

H01S005/00

US Classification:

372/045000

Abstract:

An interband cascade (IC) light emitting device having narrow ridges, and a method of growing and fabricating the IC light emitting device is disclosed. The IC light emitting device produced by the method of the present invention has 18 active regions separated by n-type injection regions and a plurality of coupled quantum wells of Al(In)Sb, InAs, and Ga(In)Sb layers. The IC light emitting device produced according to the present method has a differential external quantum efficiency of at least 500%, a peak power output of at least 4W/facet, a power conversion efficiency of at least 14% in continuous wave at 80K, a power conversion efficiency of at least 18% in pulsed wave operation at 80K, a continuous wave operation temperature of 142 K or less, a thermal resistance of from about 24-29 K*cm/kW and continuous wave output powers of at least 100 mW/facet at temperatures above 77K.

US Patent:

20180323580, Nov 8, 2018

Filed:

Apr 30, 2018

Appl. No.:

15/967139

Inventors:

- Jessup MD, US
John PHAM - Fairfax VA, US
Michael P. STOCKER - Laurel MD, US
Kevin LASCOLA - Columbia MD, US

International Classification:

H01S 5/34
H01S 5/22
H01S 5/12
H01S 5/042
H01S 5/028

Abstract:

An interband cascade laser including: a ridge waveguide having alternating first and second regions; wherein the first region has a constant width, and the second region has a width that matches that of the first region at boundaries between the first region and the second region, and the width of the second region increases to a maximum that is larger than the width of the first region, such that a partially-corrugated sidewall along each side of the ridge waveguide is formed; wherein the first region comprises a grating structure, and due to periodic nature of the first region, the grating structure is in a form of a sampled grating; and wherein the partially-corrugated sidewall increases waveguide losses for radiation in higher order lateral modes as compared to the fundamental waveguide mode.