John A Pollard

US Patent:

20130331329, Dec 12, 2013

Filed:

Feb 24, 2012

Appl. No.:

14/001306

Inventors:

John Robert Pollard - Wallingford PA, US
Peter B. Crino - Moorestown NJ, US

Assignee:

THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA - Philadelphia PA

International Classification:

G01N 33/543
A61K 38/17

US Classification:

514 177, 506 18, 435 793, 435 794, 435 795

Abstract:

The application relates to markers for seizures and epilepsy. Polypeptide expression panels or arrays are provided, comprising one or more probes capable of binding specific polypeptides in blood plasma or blood serum of a mammalian subject. Also provided are methods for detecting seizure, methods for predicting seizure, use of sICAM-5 in the treatment of seizure, methods for assessing the effectiveness of a treatment of seizure, and diagnostic kits.

US Patent:

44452691, May 1, 1984

Filed:

Aug 27, 1981

Appl. No.:

6/296751

Inventors:

John H. Pollard - Alexandria VA

Assignee:

The United States of America as represented by the Scretary of the Army - Washington DC

International Classification:

H01L 21368
H01L 2128

US Classification:

29572

Abstract:

An array of semiconductive photoconductor detectors is formed on a substr with which the array forms a heterojunction. The array has a whole or partial overlayer of the same material as the substrate. Ohmic connections are made on the detectors and conductive read-out leads are connected to these connections; the leads are made of a conductor that forms a Schottky barrier with the substrate and overlayer. Ohmic connections are made to the substrate and overlayer such that a voltage bias may be applied between the substrate-overlayer combination and the array. The bais is used to control the accumulation layer in the substrate beneath the array in order to maximize sesitivity.

US Patent:

42283655, Oct 14, 1980

Filed:

Oct 3, 1978

Appl. No.:

5/948129

Inventors:

William A. Gutierrez - Woodbridge VA
John H. Pollard - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G11C 1928
H01L 2978
H01L 2714
H01L 2956

US Classification:

307221D

Abstract:

An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charge coupled device (CCD) "well filling" by using a heterojunction barrier between the absorber, or detector layer, and the transfer layer. Injection of signal charge into a CCD multiplexer is controlled by establishing a punch through condition between the absorber layer and the CCD channel. The detector layer and the CCD multiplexer are on different planes of the focal plane array.

US Patent:

42735963, Jun 16, 1981

Filed:

Jan 2, 1980

Appl. No.:

6/109025

Inventors:

William A. Gutierrez - Woodbridge VA
John H. Pollard - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 21368
H01L 2182
H01L 2714

US Classification:

148171

Abstract:

An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charged-coupled device (CCD) "well filling" by using a heterojunction barrier between the absorber, or detector layer, and the transfer layer. Injection of signal charge into a CCD multiplexer is controlled by establishing a punch through condition between the absorber layer and the CCD channel. The detector layer and the CCD multiplexer are on different planes of the focal plane array.

US Patent:

46293221, Dec 16, 1986

Filed:

Oct 29, 1984

Appl. No.:

6/665893

Inventors:

John H. Pollard - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01J 342

US Classification:

356300

Abstract:

An apparatus and method for determining the relative proportions of two eents of a ternary compound from light reflected off a sample of the compound. The light is varied in wavelength and a graph of reflectance vs wavelength is stored. For a given compound of general form A. sub. x B. sub. 1-x C, x may be determined by converting the stored graph to a graph of reflectance vs photon energy of the light, determining the photon energy of the light for the longest wavelength peak on the converted graph, and computing x from the equation E. sub. 1 =a+bx+cx. sup. 2 wherein a, b, and c are predetermined constants, and E. sub. 1 is the photon energy in electron volts of the peak of interest.

US Patent:

44399120, Apr 3, 1984

Filed:

Apr 19, 1982

Appl. No.:

6/369774

Inventors:

John H. Pollard - Alexandria VA
John B. Ramsey - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 3118

US Classification:

29572

Abstract:

A mercury-cadmium-telluride (HgCdTe) epitaxial detector array is formed on a cadmium telluride (CdTe) substrate. Connecting leads to the detectors are a molybdenum layer covered by a gold-germanium layer. These leads have excellent matches for the thermal coefficients of expansion of the HgCdTe and CdTe and provide ohmic contacts such that the D* of the array is greater than that of arrays made by prior processes using known lead materials, and the noise level is reduced by a factor of approximately three.