John J Robbins

US Patent:

8268696, Sep 18, 2012

Filed:

Dec 9, 2010

Appl. No.:

12/964430

Inventors:

Scott R. Summerfelt - Garland TX, US
Stephen A. Meisner - Allen TX, US
John B. Robbins - McKinney TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/762

US Classification:

438401, 438462, 438975, 257797, 257E21525, 257E23001, 257E23179

Abstract:

An IC alignment mark in a contact metal layer for use under an opaque layer, and a process for forming the alignment mark, are disclosed. The alignment mark includes contact metal fields, each several microns wide, with an array of PMD pillars in the interior, formed during contact etch, contact metal deposition and selective contact metal removal processes. The pillars are arrayed such that all exposed surfaces of the contact metal are planar. One configuration is a rectangular array in which every other row is laterally offset by one-half of the column spacing. Horizontal dimensions of the pillars are selected to maximize the contact metal fill factor, while providing sufficient adhesion to the underlying substrate during processing. The contact metal is at least 15 nanometers lower than the PMD layer surrounding the alignment mark, as a result of the contact metal removal process.

US Patent:

8324742, Dec 4, 2012

Filed:

Aug 1, 2008

Appl. No.:

12/185003

Inventors:

Scott R. Summerfelt - Garland TX, US
Stephen A. Meisner - Allen TX, US
John B. Robbins - McKinney TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23/544
H01L 21/76

US Classification:

257797, 257E21521, 257 23179, 438401, 438462, 438975

Abstract:

An IC alignment mark in a contact metal layer for use under an opaque layer, and a process for forming the alignment mark, are disclosed. The alignment mark includes contact metal fields, each several microns wide, with an array of PMD pillars in the interior, formed during contact etch, contact metal deposition and selective contact metal removal processes. The pillars are arrayed such that all exposed surfaces of the contact metal are planar. One configuration is a rectangular array in which every other row is laterally offset by one-half of the column spacing. Horizontal dimensions of the pillars are selected to maximize the contact metal fill factor, while providing sufficient adhesion to the underlying substrate during processing. The contact metal is at least 15 nanometers lower than the PMD layer surrounding the alignment mark, as a result of the contact metal removal process.

US Patent:

20150187570, Jul 2, 2015

Filed:

Aug 25, 2014

Appl. No.:

14/467688

Inventors:

- Dallas TX, US
John Britton ROBBINS - McKinney TX, US

International Classification:

H01L 21/02

Abstract:

Use of a non-solvent for the edge bead removal of spin-coated PZT or PLZT thinfilms, eliminates swelling of the exposed edges of the PZT or PLZT thinfilms and eliminates delamination and formation of particle defects in subsequent bake and anneal steps.

US Patent:

20140111301, Apr 24, 2014

Filed:

Oct 18, 2012

Appl. No.:

13/655419

Inventors:

- Dallas TX, US
John Britton Robbins - McKinney TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01C 1/012
H01L 21/02

US Classification:

338308, 438382, 257E21004

Abstract:

The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.