John G Rodgers

US Patent:

6555411, Apr 29, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/024831

Inventors:

Zhenan Bao - Jersey City NJ
Edwin Arthur Chandross - Murray Hill NJ
John A. Rodgers - New Providence NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 540

US Classification:

438 99, 438197, 438158, 438199

Abstract:

The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.

US Patent:

6596569, Jul 22, 2003

Filed:

Mar 15, 2002

Appl. No.:

10/098201

Inventors:

Zhenan Bao - North Plainfield NJ
Peter Kian-Hoon Ho - North Plainfield NJ
Yueh-Lin Loo - Princeton NJ
John A. Rodgers - New Providence NJ
Takao Someya - New Providence NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 2100

US Classification:

438151, 438149, 438459, 438778

Abstract:

The specification describes a lamination method for thin film transistor TFT devices wherein each ply of the laminate is a polymer and each contains a portion of the TFT or the interconnection circuit. The plies are laminated together using a solid adhesive polymer layer on the surface of one or both of the plies. The solid adhesive polymer layer has a low elastic modulus that provides effective encapsulation of the TFT, and laminates the plies without high heat or pressure.