John R Siomkos

US Patent:

8313985, Nov 20, 2012

Filed:

Sep 14, 2011

Appl. No.:

13/232330

Inventors:

Jayanti Jaganatha Rao - Jamestown IN, US
John Robert Siomkos - Greensboro NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 21/56
H01L 23/29

US Classification:

438127, 257E21502, 257788, 257E23118, 330307

Abstract:

Power amplifiers and methods of coating a protective film of alumina (AlO) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

US Patent:

8351221, Jan 8, 2013

Filed:

Jan 14, 2011

Appl. No.:

13/006845

Inventors:

John Robert Siomkos - Greensboro NC, US
Mark Alan Crandall - Oak Ridge NC, US
Carl Hinshaw - Burlington NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H05K 9/00

US Classification:

361818, 361816, 361799, 361800

Abstract:

The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.

US Patent:

8440012, May 14, 2013

Filed:

Sep 14, 2011

Appl. No.:

13/232319

Inventors:

Jayanti Jaganatha Rao - Jamestown NC, US
John Robert Siomkos - Greensboro NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

C09D 1/00
C09K 17/40
H01L 41/09
H03H 9/25

US Classification:

1062865, 10628717, 310313 R, 310340

Abstract:

Acoustic wave devices and methods of coating a protective film of alumina (AlO) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

US Patent:

20120044653, Feb 23, 2012

Filed:

Jul 25, 2011

Appl. No.:

13/189838

Inventors:

Thomas Scott Morris - Lewisville NC, US
Ulrik Riis Madsen - Norresundby, DK
Brian D. Sawyer - Menlo Park CA, US
Milind Shah - San Diego, CA
John Robert Siomkos - Greensboro NC, US
Mark Alan Crandall - Oak Ridge NC, US
Dan Carey - Kernersville NC, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H05K 7/00
H05K 13/00

US Classification:

361728, 29846

Abstract:

Embodiments include devices and methods for manufacturing a module having a first shielded compartment and a second shielded compartment, wherein the first shielded compartment is electrically isolated from the second shielded compartment. Electrical conductivity is controlled in a manner in which current flow between shielded circuits is directed to reduce or eliminate energy from being coupled between one or more shielded compartments on the same module. Each module may have a plurality of individual shielded compartments, where each compartment has a dedicated ground plane. The shields for each compartment may be tied to the dedicated ground plane of the compartment. Because the dedicated ground planes are not tied together, each of the shielded compartments on the modules remains isolated from all the other shielded compartments on the modules. In some embodiments having a plurality of shielded compartments, there is at least one isolated shielded compartment depending upon the design needs of the module.

US Patent:

20130072253, Mar 21, 2013

Filed:

Sep 12, 2012

Appl. No.:

13/611620

Inventors:

John Robert Siomkos - Greensboro NC, US
Jayanti Jaganatha Rao - Jamestown NC, US
Christopher Truong Ngo - Queen Creek AZ, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H04W 88/02

US Classification:

4555501

Abstract:

An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.

US Patent:

20130221800, Aug 29, 2013

Filed:

Apr 16, 2013

Appl. No.:

13/863841

Inventors:

Jayanti Jaganatha Rao - Jamestown NC, US
John Robert Siomkos - Greensboro NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 41/053

US Classification:

310313 R

Abstract:

Acoustic wave devices and methods of coating a protective film of alumina (AlO) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

US Patent:

20130230643, Sep 5, 2013

Filed:

Apr 16, 2013

Appl. No.:

13/863808

Inventors:

Jayanti Jaganatha Rao - Jamestown NC, US
John Robert Siomkos - Greensboro NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H03H 3/08

US Classification:

427100

Abstract:

Acoustic wave devices and methods of coating a protective film of alumina (AlO) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

US Patent:

6259902, Jul 10, 2001

Filed:

Oct 29, 1998

Appl. No.:

9/181760

Inventors:

John Robert Siomkos - Royal Palm Beach FL
Edgar Herbert Callaway - Boca Raton FL

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H04B 118

US Classification:

4551901

Abstract:

A dual channel receiver (100) includes a front end bandpass filter (120) that has a front end bandwidth, a first mixer (130), a second mixer (135), and two essentially identical receiver back ends (190, 195). The front end bandpass filter splits a received signal into a first signal (121) and a second signal (122) of essentially equal signal strengths and provides out of band isolation between first and second signal outputs (123, 124). The first mixer is coupled to the first signal and to a high side injection signal (131), and generates a first mixer output signal (132). The second mixer is coupled to the second signal and to a low side injection signal (136), and generates a second mixer output signal (137). Each of the two essentially identical receiver back ends is coupled to one of the first and second mixer output signals.