John M Yamartino from 100 Moffett Blvd APT 415, Mountain View, CA 94043, age 60, Phone: 6507873820

Resumes

John Yamartino

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Location:

Greater New York City Area

Industry:

Semiconductors

Senior Director, Service Analytics Research And Development

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Location:

100 Moffett Blvd, Mountain View, CA 94043

Industry:

Semiconductors

Work:

IBM since Jun 2006
Senior Data Scientist
Applied Materials Feb 1997 - Apr 2006
Senior Member of Technical Staff
CERN: European Laboratory for Particle Physics Nov 1993 - Dec 1996
Research Associate

Education:

Massachusetts Institute of Technology 1986 - 1993
PhD, Physics

Skills:

Data Analysis
Statistics
Semiconductors
Predictive Analytics
R&D
Testing
Data Mining
Research and Development
Predictive Modeling
Physics
Analytics
Data Visualization
Cross Functional Team Leadership
Exploratory Data Analysis
Statistical Modeling
Big Data
Design of Experiments
Time Series Analysis
Pattern Recognition
Variance Analysis
Simulations
Program Management
Semiconductor Industry
Thin Films
Algorithms
Data Science
Monte Carlo Simulation
Sensor Data Analysis
Industrial Iot
Oee
Metrology
Manufacturing
Process Control
Optimization
Management
Industry 4.0
Smart Fab
Particle Physics
Advanced Process Control
Internet of Things
Data Acquisition
Engineering Leadership
Monte Carlo
Prediction
Data Analytics
Smart Factory

Languages:

English

Certifications:

Engineering Leadership
Tackling the Challenges of Big Data

Us Patents

Plasma Assisted Processing Chamber With Separate Control Of Species Density
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US Patent:

6352049, Mar 5, 2002
Filed:

Jul 20, 1998
Appl. No.:

09/119417
Inventors:

Gerald Yin - Cupertino CA
Hong Ching Shan - San Jose CA
Peter Loewenhardt - San Jose CA
Chii Lee - Fremont CA
Yan Ye - Campbell CA
Xueyan Qian - Milpitas CA
Songlin Xu - Fremont CA
Arthur Chen - Fremont CA
Arthur Sato - San Jose CA
Michael Grimbergen - Redwood City CA
Diana Ma - Saratoga CA
John Yamartino - Palo Alto CA
Chun Yan - Santa Clara CA
Wade Zawalski - Sunnyvale CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23E 1648
US Classification:

118723MP, 118723 AN, 118723 IR, 156345
Abstract:

The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Method For Providing Pulsed Plasma During A Portion Of A Semiconductor Wafer Process
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US Patent:

6566272, May 20, 2003
Filed:

Jul 23, 1999
Appl. No.:

09/360883
Inventors:

Alex Paterson - San Jose CA
John M. Yamartino - Palo Alto CA
Peter K. Loewenhardt - San Jose CA
Wade Zawalski - San Francisco CA
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

H01L 21302
US Classification:

438710, 438712, 438730
Abstract:

A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.

Method For Enhancing Plasma Processing Performance
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US Patent:

6569775, May 27, 2003
Filed:

Feb 17, 2000
Appl. No.:

09/506065
Inventors:

Peter K. Loewenhardt - San Jose CA
John M. Yamartino - Palo Alto CA
Hui Chen - Santa Clara CA
Diana Xiaobing Ma - Saratoga CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2100
US Classification:

438709, 216 63, 216 66, 216 75, 216 78, 438712, 438714, 438720, 438742, 15634524
Abstract:

A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.

Method For Reducing Topography Dependent Charging Effects In A Plasma Enhanced Semiconductor Wafer Processing System
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US Patent:

6635577, Oct 21, 2003
Filed:

Mar 30, 1999
Appl. No.:

09/280462
Inventors:

John M. Yamartino - Palo Alto CA
Kenlin Huang - Milpitas CA
Diana Xiaobing Ma - Saratoga CA
Assignee:

Applied Materials, Inc - Santa Clara CA
International Classification:

H01L 21302
US Classification:

438706, 438707
Abstract:

A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.

Shaping A Plasma With A Magnetic Field To Control Etch Rate Uniformity
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US Patent:

6673199, Jan 6, 2004
Filed:

Mar 7, 2001
Appl. No.:

09/800876
Inventors:

John M. Yamartino - Palo Alto CA
Peter K. Loewenhardt - Pleasanton CA
Dmitry Lubomirsky - Cupertino CA
Saravjeet Singh - Santa Clara CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H05H 100
US Classification:

15634549, 15634546, 118723 I, 118723 E, 118723 MA, 118723 MR, 438732, 438728
Abstract:

A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.

Split-Phase Chamber Modeling For Chamber Matching And Fault Detection
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US Patent:

7624003, Nov 24, 2009
Filed:

Jan 10, 2005
Appl. No.:

11/033363
Inventors:

John M. Yamartino - Palo Alto CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

G06G 7/48
US Classification:

703 6, 700108
Abstract:

In at least one embodiment, the present invention is a method for thin-film process chamber data analysis, which includes acquiring chamber data, defining an adjustment portion of the chamber data and a steady-state portion of the chamber data, and forming a chamber model having an adjustment portion and a steady-state portion. The method can further include comparing the chamber model with a subject chamber to provide a chamber data comparison and utilizing the chamber data comparison.

Method And System Of Monitoring Manufacturing Equipment
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US Patent:

8010225, Aug 30, 2011
Filed:

Jan 30, 2008
Appl. No.:

12/022448
Inventors:

John M. Yamartino - Ossining NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

G06F 19/00
G01L 7/00
G01F 19/00
C03B 5/027
B44C 1/22
US Classification:

700180, 73714, 73426, 373 31, 373 32, 216 37
Abstract:

A method and system is provided for monitoring manufacturing equipment and, more particularly, for monitoring manufacturing equipment in a semiconductor fabrication facility using existing tool elements. The method includes operating a tool working at an operating mode such that at least one of its control parameters is outside of a normal operating range, and measuring the at least on of the control parameters of the tool working at the operating mode outside of the normal operating range. The method further includes detecting a change to a condition of the tool based on the measuring of the at least one control parameter.

Method And System For Monitoring An Etch Process
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US Patent:

8257546, Sep 4, 2012
Filed:

Sep 29, 2003
Appl. No.:

10/674568
Inventors:

Matthew Fenton Davis - Brookdale CA, US
John M. Yamartino - Palo Alto CA, US
Lei Lian - Santa Clara CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/00
US Classification:

15634525, 15634524, 15634526, 438 9, 438689, 438706, 438710, 216 67
Abstract:

A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e. g. , critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e. g. , spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.