Jon J Roberts

US Patent:

45660263, Jan 21, 1986

Filed:

Apr 25, 1984

Appl. No.:

6/603862

Inventors:

Ed C. Lee - Bloomington MN
Jon A. Roberts - Minnetonka MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2348
B05D 512

US Classification:

357 71

Abstract:

Disclosed is a bimetal layer located between two portions of an integrated circuit, the bimetal layer comprising a layer of TiWN and a layer of TiN.

US Patent:

45156689, May 7, 1985

Filed:

Apr 25, 1984

Appl. No.:

6/603858

Inventors:

David J. Brownell - Maple Grove MN
Jon A. Roberts - Minnetonka MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

C23C 1500

US Classification:

204192D

Abstract:

The present invention comprises a method of forming a thin film dielectric layer on a substrate. The method comprises providing a sputtering chamber having a dielectric target disposed on a target electrode. A substrate to be covered with a thin film dielectric layer is introduced into the sputtering chamber and the substrate is located on a substrate holder electrode spaced from the target electrode. The chamber is then evacuated, and a sputtering atmosphere comprising an inert gas and a gas containing an element of a gettering material is introduced into the chamber. The gas containing an element of a gettering material is transferred into the chamber through a metering valve from a container outside the chamber. An RF potential is applied across the target electrode and the substrate electrode to establish a glow discharge in the region between the electrodes. Finally, a thin film dielectric layer doped with a gettering material is formed by a chemical reaction in the chamber.

US Patent:

47174498, Jan 5, 1988

Filed:

Jul 25, 1986

Appl. No.:

6/890874

Inventors:

David G. Erie - Cottage Grove MN
Jon A. Roberts - Minnetonka MN
Eddie C. Lee - Bloomington MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

437195

Abstract:

Disclosed is a method of fabricating an integrated circuit. A substrate comprising a semiconductor material and having a first surface is provided. A first layer of metalization interconnects is formed on the first surface. A first thin film layer comprising a dielectric barrier material is deposited over the first layer of metalization interconnects. A second thin film layer comprising a dielectric passivating material is deposited over the first thin film layer of dielectric barrier material. A via having a width greater than the width of a metalization interconnect is then plasma etched in the dielectric passivating material using a first etch gas. The dielectric barrier material is then plasma etched using a second etch gas to remove the dielectric barrier material in the area of the via. A second layer of metalization interconnects is then formed, a metalization interconnect in each of the first and second layers of metalization interconnects being connected in the via.

US Patent:

46100628, Sep 9, 1986

Filed:

Sep 6, 1984

Appl. No.:

6/647957

Inventors:

Jon A. Roberts - Minnetonka MN
Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01G 700

US Classification:

29 2541

Abstract:

A capacitive acoustic transducer comprises a first field plate mounted to a semiconductor substrate structure, a second metal field plate having first and second oppositely and substantially exposed surfaces, and a mounting arrangement for mounting the second field plate to the semiconductor substrate structure so that the first and second field plates form an acoustically responsive capacitor, the first exposed surface of the second field plate substantially facing the first field plate, the mounting arrangement allowing the second field plate to respond to acoustic energy for altering the capacitance between the first and second field plates, the mounting arrangement including first and second contacts for respective connection to the first and second field plates. The method of fabricating this capacitive acoustic transducer includes the step of forming the second field plate on a disposable support structure, mounting the second field plate on the disposable support structure to the first field plate on the substrate structure and then disposing of the disposable support structure.

US Patent:

47136820, Dec 15, 1987

Filed:

Dec 31, 1985

Appl. No.:

6/815426

Inventors:

David G. Erie - Cottage Grove MN
Jon A. Roberts - Minnetonka MN
Eddie C. Lee - Bloomington MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2934

US Classification:

357 54

Abstract:

An integrated circuit comprising a substrate. The substrate comprises a semiconductor material and has a first surface. The circuit further comprises a layer of metalization interconnects over the first surface, each interconnect having a width. A first thin film layer comprising a dielectric barrier material is deposited directly onto the first layer of metalization interconnects. A second thin film layer comprising a dielectric passivating material is deposited directly onto the first thin layer of dielectric barrier material. A via is formed in the two thin film layers over a first metalization interconnect protruding into the via. The first metalization interconnect has a width less than the width of the via. A second metallization interconnect is connected to the first metalization interconnect in the via.

US Patent:

44953852, Jan 22, 1985

Filed:

Dec 2, 1982

Appl. No.:

6/446290

Inventors:

Jon A. Roberts - Minnetonka MN
Thomas E. Hendrickson - Wayzata MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H04R 2302

US Classification:

179111R

Abstract:

A capacitive acoustic transducer comprises a first field plate mounted to a semiconductor substrate structure, a second metal field plate having first and second oppositely and substantially exposed surfaces, and a mounting arrangement for mounting the second field plate to the semiconductor substrate structure so that the first and second field plates form an acoustically responsive capacitor, the first exposed surface of the second field plate substantially facing the first field plate, the mounting arrangement allowing the second field plate to respond to acoustic energy for altering the capacitance between the first and second field plates, the mounting arrangement including first and second contacts for respective connection to the first and second field plates. The method of fabricating this capacitive acoustic transducer includes the step of forming the second field plate on a disposable support structure, mounting the second field plate on the disposable support structure to the first field plate on the substrate structure and then disposing of the disposable support structure.