Jonathan D Cook

US Patent:

20210249252, Aug 12, 2021

Filed:

May 22, 2020

Appl. No.:

16/882219

Inventors:

- Los Angeles CA, US
Mark P. D'EVELYN - Vancouver WA, US
Derrick S. KAMBER - Camas WA, US
Dirk EHRENTRAUT - Camas WA, US
Jonathan D. COOK - Santa Barbara CA, US
James WENGER - Vancouver WA, US

International Classification:

H01L 21/02
C30B 7/10
C30B 29/40
C30B 33/10
C30B 7/00

Abstract:

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

US Patent:

20210222317, Jul 22, 2021

Filed:

Dec 23, 2020

Appl. No.:

17/133002

Inventors:

- Los Angeles CA, US
Drew W. CARDWELL - Camas WA, US
Jonathan D. COOK - Santa Barbara CA, US

Assignee:

SLT Technologies, Inc - Los Angeles CA

International Classification:

C30B 7/10
C30B 29/40
C30B 28/04

Abstract:

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

US Patent:

20200283892, Sep 10, 2020

Filed:

Mar 10, 2020

Appl. No.:

16/814813

Inventors:

- Los Angeles CA, US
Derrick S. KAMBER - Camas WA, US
Mark P. D'EVELYN - Vancouver WA, US
Jonathan D. COOK - Santa Barbara CA, US

International Classification:

C23C 16/30
C23C 16/44
C30B 7/10
C30B 29/40
C23C 16/01
C01B 21/06
C23C 16/448

Abstract:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

US Patent:

20190161858, May 30, 2019

Filed:

Jun 29, 2018

Appl. No.:

16/023137

Inventors:

- Los Angeles CA, US
Derrick S. KAMBER - Goleta CA, US
Mark P. D'EVELYN - Santa Barbara CA, US
Jonathan D. COOK - Santa Barbara CA, US

International Classification:

C23C 16/30
C23C 16/448
C30B 29/40
C30B 7/10
C23C 16/44
C01B 21/06
C23C 16/01

Abstract:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

US Patent:

20160222506, Aug 4, 2016

Filed:

Jan 29, 2016

Appl. No.:

15/011266

Inventors:

- Fremont CA, US
DERRICK S. KAMBER - GOLETA CA, US
MARK P. D'EVELYN - SANTA BARBARA CA, US
JONATHAN D. COOK - SANTA BARBARA CA, US

International Classification:

C23C 16/44
C01B 21/06
C23C 16/01
C23C 16/30
C30B 7/10
C30B 29/40

Abstract:

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.