Jonathan P Pierce

US Patent:

7804019, Sep 28, 2010

Filed:

Feb 1, 2008

Appl. No.:

12/024475

Inventors:

Jonathan Pierce - Piscataway NJ, US
Robert P. Vaudo - Cary NC, US

Assignee:

Nextreme Thermal Solutions, Inc. - Durham NC

International Classification:

H01L 35/28
H01L 35/34
H01L 37/00

US Classification:

136200, 136238, 136240, 117953, 117954, 117 88, 117 89, 117 90, 117 91, 117 92, 117 93, 117101

Abstract:

A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.