Jonathan N Reid

US Patent:

6458262, Oct 1, 2002

Filed:

Mar 9, 2001

Appl. No.:

09/802490

Inventors:

Jonathan David Reid - Sherwood OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C25D 2114

US Classification:

205 82, 2042286, 2042292, 204232, 204237, 205101

Abstract:

The present invention provides methods and apparatus for analysis and monitoring of electrolyte bath composition. Based on analysis results, the invention controls electrolyte bath composition and plating hardware. Thus, the invention provides control of electroplating processes based on plating bath composition data. The invention accomplishes this by incorporating accurate bath component analysis data into a feedback control mechanism for electroplating. Bath electrolyte is treated and analyzed in a flow-through system in order to identify plating bath component concentrations and based on the results, the plating bath formulation and plating process are controlled.

US Patent:

6527920, Mar 4, 2003

Filed:

Nov 3, 2000

Appl. No.:

09/706272

Inventors:

Steven T. Mayer - Lake Oswego OR
Evan E. Patton - Portland OR
Robert L. Jackson - San Jose CA
Jonathan D. Reid - Sherwood OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C25B 1500

US Classification:

204237, 204252, 204263, 204264, 204295, 204296, 204266

Abstract:

An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.

US Patent:

6551483, Apr 22, 2003

Filed:

May 10, 2001

Appl. No.:

09/853959

Inventors:

Steven T. Mayer - Clackamas OR
Jonathan Reid - Sherwood OR
Robert Contolini - Clackamas OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C25D 2112

US Classification:

205 81, 205 87, 205102, 205103, 205104

Abstract:

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

US Patent:

6551487, Apr 22, 2003

Filed:

May 31, 2001

Appl. No.:

09/872341

Inventors:

Jonathan D. Reid - Sherwood OR
Steven T. Mayer - Lake Oswego OR
Seshasayee Varadarajan - Wilsonville OR
David C. Smith - Lake Oswego OR
Evan E. Patton - Portland OR
Dinesh S. Kalakkad - Portland OR
Gary Lind - Penn Valley CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C25D 500

US Classification:

205137, 205143, 205149

Abstract:

The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafers orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

US Patent:

6562204, May 13, 2003

Filed:

May 10, 2001

Appl. No.:

09/854230

Inventors:

Steven T. Mayer - Lake Oswego OR
Jonathan Reid - Sherwood OR
Robert Contolini - Lake Oswego OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

B23H 302

US Classification:

2042299, 2042298, 2042307, 2042971, 20429714

Abstract:

Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

US Patent:

6569299, May 27, 2003

Filed:

May 18, 2000

Appl. No.:

09/574666

Inventors:

Jonathan David Reid - Sherwood OR
Robert J. Contolini - Lake Oswego OR
John Owen Dukovic - Plesantville NY

Assignee:

Novellus Systems, Inc. - San Jose CA
International Business Machines, Corp. - Armonk NY

International Classification:

C25B 1300

US Classification:

204282, 204283, 20429711, 204238, 204259, 205148, 205 68

Abstract:

An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.

US Patent:

6653226, Nov 25, 2003

Filed:

Jan 9, 2001

Appl. No.:

09/758307

Inventors:

Jonathan David Reid - Sherwood OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 214763

US Classification:

438631, 438675, 438751

Abstract:

Methods and apparatus are used for electrochemical planarization of an electrically conductive material surface with varying topography from a partially fabricated integrated circuit, in which protruding regions of the conductive material are removed more quickly than recessed regions to thereby increase the planarity of the conductive material surface. This is accomplished by using dissolution electrochemistry. The partially fabricated integrated circuit is used as the anode in an electrochemical cell, with the anode and cathode active surfaces positioned in very close proximity. By using highly resistive electrolyte and moving the anode and cathode progressively closer during electrochemical dissolution, the electrically conductive material surface is effectively planarized.

US Patent:

6664122, Dec 16, 2003

Filed:

Nov 27, 2001

Appl. No.:

09/996425

Inventors:

Tatyana N. Andryuschenko - Portland OR
Jonathan D. Reid - Sherwood OR
Steven T. Mayer - Lake Oswego OR
Eric G. Webb - Salem OR

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 2166

US Classification:

438 17, 438687

Abstract:

Disclosed is a procedure for deposition of a thin and relatively continuous electroless copper film on the substrate of sub-micron integrated circuit features. The electroless copper film is deposited onto a previously deposited PVD copper film, which may be discontinuous. The continuous film formed by electroless deposition allows for sufficient filling of the sub-micron integrated circuit features by electrodeposition. The electroless bath employed to form the continuous electroless copper film may be composed of a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers. In one example, the reducing agent contains an aldehyde moiety.